@article{oai:miyazaki-u.repo.nii.ac.jp:00002586,
 author = {田代, 龍一 and Tashiro, Ryuichi and 永岡, 章 and Nagaoka, Akira and 太田原, 麗 and Ootabara, Urei and 山本, 由美 and Yamamoto, Yumi and Yoshino, Kenji and 吉野, 賢二 and Ikari, Tetsuo and 碇, 哲雄 and 田代, 龍一 and Tashiro, Ryuichi and 太田原, 麗 and Ootabara, Urei},
 journal = {宮崎大学工学部紀要, Memoirs of Faculty of Engineering, University of Miyazaki},
 month = {Jul},
 note = {Undoped Cu_2ZnSnS_4 crystals were grown by hot-press (HP) method at 400 ～ 700 °C for 1 h under high pressure (10 ～ 40 MPa). One of the advantages of the HP method is that a crystal growth is easy at low temperature. The sizes of the samples were 30 mm in diameter. All samples indicate kesterite structures, nearly stoichiometry and p-type by means of X-ray diffraction, electron probe microanalysis and thermoprobe analysis, respectively. However, the sample grown at 400 °C has a starting material phase. According to increasing temperature, the sample does not have the secondary phase. A single phase Cu_2ZnSnS_4 crystal can be successfully obtained at 600 °C. This temperature is lower than the melting point.},
 pages = {105--110},
 title = {ホットプレス法によるCu2ZnSnS4のバルク結晶成長},
 volume = {41},
 year = {2012},
 yomi = {タシロ, リュウイチ and ナガオカ, アキラ and オオタバラ, ウレイ and ヤマモト, ユミ and ヨシノ, ケンジ and イカリ, テツオ and タシロ, リュウイチ and オオタバラ, ウレイ}
}