{"created":"2023-05-15T09:58:32.288628+00:00","id":2509,"links":{},"metadata":{"_buckets":{"deposit":"5af7e0d9-f64a-4496-8fd7-c8a3c5ff4601"},"_deposit":{"created_by":5,"id":"2509","owner":"5","owners":[5],"pid":{"revision_id":0,"type":"depid","value":"2509"},"status":"published"},"_oai":{"id":"oai:miyazaki-u.repo.nii.ac.jp:00002509","sets":["73","73:36","73:36:330","73:36:330:317"]},"author_link":["28621","14030","11920"],"item_10002_alternative_title_1":{"attribute_name":"その他（別言語等）のタイトル","attribute_value_mlt":[{"subitem_alternative_title":"ゲンシソウ エピタキシーホウ ニ ヨル GaAs(001) キバンジョウ ノ MnAs セイチョウ","subitem_alternative_title_language":"ja-Kana"}]},"item_10002_biblio_info_7":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2007-08-30","bibliographicIssueDateType":"Issued"},"bibliographicPageEnd":"41","bibliographicPageStart":"37","bibliographicVolumeNumber":"36","bibliographic_titles":[{"bibliographic_title":"宮崎大学工学部紀要","bibliographic_titleLang":"ja"},{"bibliographic_title":"Memoirs of Faculty of Engineering, University of Miyazaki","bibliographic_titleLang":"en"}]}]},"item_10002_description_5":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"Atomic layer epitaxy(ALE) of MnAs on GaAs(001) has been investigated using bismethylcyclopentadienylmanganes(CH3C5CH4)2Mn and trisdimethylaminoarsine As[N(CH3)2] for manganese and arsenic precursors, respectively. The α-MnAs layer of \"type B\" orientation was successfully grown by an alternative source supply with a wide growth temperature range from 320 to 500℃. The grown layer showed a smooth surface morphology, reflecting the self-limiting growth. The decresed growth rate was observed was realized at higher growth temperatures but the saturation thickness was 9.5×10(-2)nm/cycle, which was attributed to the formation of a stable surface-reconstruction of manganese stabilized surface.","subitem_description_language":"en","subitem_description_type":"Abstract"}]},"item_10002_publisher_8":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"宮崎大学工学部","subitem_publisher_language":"ja"},{"subitem_publisher":"Faculty of Engineering, University of Miyazaki","subitem_publisher_language":"en"}]},"item_10002_source_id_11":{"attribute_name":"書誌レコードID","attribute_value_mlt":[{"subitem_source_identifier":"AA00732558","subitem_source_identifier_type":"NCID"}]},"item_10002_source_id_9":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"05404924","subitem_source_identifier_type":"ISSN"}]},"item_10002_version_type_20":{"attribute_name":"著者版フラグ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_970fb48d4fbd8a85","subitem_version_type":"VoR"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorAffiliations":[{"affiliationNameIdentifiers":[{"affiliationNameIdentifier":"","affiliationNameIdentifierScheme":"ISNI","affiliationNameIdentifierURI":"http://www.isni.org/isni/"}],"affiliationNames":[{"affiliationName":"","affiliationNameLang":"ja"}]}],"creatorNames":[{"creatorName":"原口, 智宏","creatorNameLang":"ja"},{"creatorName":"ハラグチ, トモヒロ","creatorNameLang":"ja-Kana"},{"creatorName":"Haraguchi, Tomohiro","creatorNameLang":"en"}],"familyNames":[{},{},{}],"givenNames":[{},{},{}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"尾関, 雅志"},{"creatorName":"オゼキ, マサシ","creatorNameLang":"ja-Kana"},{"creatorName":"Ozeki, Masashi","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorAffiliations":[{"affiliationNameIdentifiers":[{"affiliationNameIdentifier":"","affiliationNameIdentifierScheme":"ISNI","affiliationNameIdentifierURI":"http://www.isni.org/isni/"}],"affiliationNames":[{"affiliationName":"","affiliationNameLang":"ja"}]}],"creatorNames":[{"creatorName":"藤田, 陽","creatorNameLang":"ja"},{"creatorName":"フジタ, アキラ","creatorNameLang":"ja-Kana"},{"creatorName":"Fujita, 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アキラ","creatorNameLang":"ja-Kana"},{"creatorName":"Fujita, Akira","creatorNameLang":"en"}],"familyNames":[{},{},{}],"givenNames":[{},{},{}],"nameIdentifiers":[{}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2020-06-21"}],"displaytype":"detail","filename":"KJ00004682864.pdf","filesize":[{"value":"417.0 kB"}],"format":"application/pdf","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"KJ00004682864.pdf","url":"https://miyazaki-u.repo.nii.ac.jp/record/2509/files/KJ00004682864.pdf"},"version_id":"50edb50a-9437-4883-8cc4-cdd9c8ad648c"}]},"item_keyword":{"attribute_name":"キーワード","attribute_value_mlt":[{"subitem_subject":"Atomic layer epitaxy, Inorganic compounds, Magnetic materials","subitem_subject_language":"en","subitem_subject_scheme":"Other"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"jpn"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"departmental bulletin paper","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"原子層エピタキシー法によるGaAs(001)基板上のMnAs成長","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"原子層エピタキシー法によるGaAs(001)基板上のMnAs成長","subitem_title_language":"ja"},{"subitem_title":"Atomic layer epitaxy of MnAs on GaAs(001)","subitem_title_language":"en"}]},"item_type_id":"10002","owner":"5","path":["73","36","330","317"],"pubdate":{"attribute_name":"PubDate","attribute_value":"2007-10-30"},"publish_date":"2007-10-30","publish_status":"0","recid":"2509","relation_version_is_last":true,"title":["原子層エピタキシー法によるGaAs(001)基板上のMnAs成長"],"weko_creator_id":"5","weko_shared_id":2},"updated":"2023-11-28T00:48:04.662909+00:00"}