@article{oai:miyazaki-u.repo.nii.ac.jp:00002509,
 author = {原口, 智宏 and Haraguchi, Tomohiro and 尾関, 雅志 and Ozeki, Masashi and 藤田, 陽 and Fujita, Akira and 原口, 智宏 and Haraguchi, Tomohiro and 藤田, 陽 and Fujita, Akira},
 journal = {宮崎大学工学部紀要, Memoirs of Faculty of Engineering, University of Miyazaki},
 month = {Aug},
 note = {Atomic layer epitaxy(ALE) of MnAs on GaAs(001) has been investigated using bismethylcyclopentadienylmanganes(CH3C5CH4)2Mn and trisdimethylaminoarsine As[N(CH3)2] for manganese and arsenic precursors, respectively. The α-MnAs layer of "type B" orientation was successfully grown by an alternative source supply with a wide growth temperature range from 320 to 500℃. The grown layer showed a smooth surface morphology, reflecting the self-limiting growth. The decresed growth rate was observed was realized at higher growth temperatures but the saturation thickness was 9.5×10(-2)nm/cycle, which was attributed to the formation of a stable surface-reconstruction of manganese stabilized surface.},
 pages = {37--41},
 title = {原子層エピタキシー法によるGaAs(001)基板上のMnAs成長},
 volume = {36},
 year = {2007},
 yomi = {ハラグチ, トモヒロ and オゼキ, マサシ and フジタ, アキラ and ハラグチ, トモヒロ and フジタ, アキラ}
}