{"created":"2023-05-15T10:38:31.228391+00:00","links":{},"metadata":{"_buckets":{"deposit":"bde3fb85-d242-41f6-b4e6-a88df8b6944e"},"_deposit":{"id":"2509.1","owners":[2],"pid":{"revision_id":0,"type":"depid","value":"2509.1"},"status":"published"},"_oai":{"id":"oai:miyazaki-u.repo.nii.ac.jp:00002509.1","sets":["73","73:36","73:36:330:317"]},"author_link":["12801","11920","12803","11922","12806"],"item_10002_alternative_title_1":{"attribute_name":"その他（別言語等）のタイトル","attribute_value_mlt":[{"subitem_alternative_title":"ゲンシソウ エピタキシーホウ ニ ヨル GaAs(001) キバンジョウ ノ MnAs セイチョウ","subitem_alternative_title_language":"ja-Kana"}]},"item_10002_biblio_info_7":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2007-08-30","bibliographicIssueDateType":"Issued"},"bibliographicPageEnd":"41","bibliographicPageStart":"37","bibliographicVolumeNumber":"36","bibliographic_titles":[{"bibliographic_title":"宮崎大学工学部紀要","bibliographic_titleLang":"ja"},{"bibliographic_title":"Memoirs of Faculty of Engineering, University of Miyazaki","bibliographic_titleLang":"en"}]}]},"item_10002_description_5":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"Atomic layer epitaxy(ALE) of MnAs on GaAs(001) has been investigated using bismethylcyclopentadienylmanganes(CH3C5CH4)2Mn and trisdimethylaminoarsine As[N(CH3)2] for manganese and arsenic precursors, respectively. The α-MnAs layer of \"type B\" orientation was successfully grown by an alternative source supply with a wide growth temperature range from 320 to 500℃. The grown layer showed a smooth surface morphology, reflecting the self-limiting growth. The decresed growth rate was observed was realized at higher growth temperatures but the saturation thickness was 9.5×10(-2)nm/cycle, which was attributed to the formation of a stable surface-reconstruction of manganese stabilized surface.","subitem_description_language":"en","subitem_description_type":"Abstract"}]},"item_10002_publisher_8":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"宮崎大学工学部","subitem_publisher_language":"ja"},{"subitem_publisher":"Faculty of Engineering, University of Miyazaki","subitem_publisher_language":"en"}]},"item_10002_source_id_11":{"attribute_name":"書誌レコードID","attribute_value_mlt":[{"subitem_source_identifier":"AA00732558","subitem_source_identifier_type":"NCID"}]},"item_10002_source_id_9":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"05404924","subitem_source_identifier_type":"ISSN"}]},"item_10002_version_type_20":{"attribute_name":"著者版フラグ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_970fb48d4fbd8a85","subitem_version_type":"VoR"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"原口, 智宏","creatorNameLang":"ja"},{"creatorName":"ハラグチ, トモヒロ","creatorNameLang":"ja-Kana"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"尾関, 雅志"},{"creatorName":"オゼキ, マサシ","creatorNameLang":"ja-Kana"},{"creatorName":"Ozeki, Masashi","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"藤田, 陽","creatorNameLang":"ja"},{"creatorName":"フジタ, アキラ","creatorNameLang":"ja-Kana"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Haraguchi, Tomohiro","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Fujita, Akira","creatorNameLang":"en"}],"nameIdentifiers":[{}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2020-06-21"}],"displaytype":"detail","filename":"KJ00004682864.pdf","filesize":[{"value":"417.0 kB"}],"format":"application/pdf","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"KJ00004682864.pdf","url":"https://miyazaki-u.repo.nii.ac.jp/record/2509.1/files/KJ00004682864.pdf"},"version_id":"eae3f353-30f6-4107-85d5-7cf0357cfb7f"}]},"item_keyword":{"attribute_name":"キーワード","attribute_value_mlt":[{"subitem_subject":"Atomic layer epitaxy, Inorganic compounds, Magnetic materials","subitem_subject_language":"en","subitem_subject_scheme":"Other"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"jpn"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"departmental bulletin paper","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"原子層エピタキシー法によるGaAs(001)基板上のMnAs成長","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"原子層エピタキシー法によるGaAs(001)基板上のMnAs成長","subitem_title_language":"ja"},{"subitem_title":"Atomic layer epitaxy of MnAs on GaAs(001)","subitem_title_language":"en"}]},"item_type_id":"10002","owner":"2","path":["36","73","317"],"pubdate":{"attribute_name":"公開日","attribute_value":"2007-10-30"},"publish_date":"2007-10-30","publish_status":"0","recid":"2509.1","relation_version_is_last":true,"title":["原子層エピタキシー法によるGaAs(001)基板上のMnAs成長"],"weko_creator_id":"2","weko_shared_id":2},"updated":"2023-07-29T11:18:05.145599+00:00"}