{"created":"2023-05-15T09:58:32.246383+00:00","id":2508,"links":{},"metadata":{"_buckets":{"deposit":"8bdfe63c-fd94-4dfe-9bc5-7a2979d31835"},"_deposit":{"created_by":9,"id":"2508","owner":"5","owners":[9],"pid":{"revision_id":0,"type":"depid","value":"2508"},"status":"published"},"_oai":{"id":"oai:miyazaki-u.repo.nii.ac.jp:00002508","sets":["73","73:36","73:36:330","73:36:330:313"]},"author_link":["7290","12047","12789","12061","12635","12790"],"item_10002_alternative_title_1":{"attribute_name":"その他（別言語等）のタイトル","attribute_value_mlt":[{"subitem_alternative_title":"Vゾク ゲンソ テンカ CuInS2 ケッショウ ノ ホット プレス セイチョウ","subitem_alternative_title_language":"ja-Kana"}]},"item_10002_biblio_info_7":{"attribute_name":"bibliographic_information","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2003-07","bibliographicIssueDateType":"Issued"},"bibliographicPageEnd":"145","bibliographicPageStart":"141","bibliographicVolumeNumber":"32","bibliographic_titles":[{"bibliographic_title":"宮崎大学工学部紀要","bibliographic_titleLang":"ja"},{"bibliographic_title":"Memoirs of Faculty of Engineering, University of Miyazaki","bibliographic_titleLang":"en"}]}]},"item_10002_description_5":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"Abstract \nV-group elements (P, As, Sb and Bi) doped CuInS2 crystals were successfully grown by \nHot-Press method at low pressure (22.5 MPa). It was concluded that all samples had \nstoichiometric compositions and were formed in a chalcopyrite structure. Thermo probe analysis \nshowed that all the samples doped with V-group elements indicated p-type conductivity. Since a \nnon-doped sample showed n-type conductivity because of S vacancy defect, I considered that the \nV-group elements substituted in the S site (Ps, Ass, Sbs and Bis) and acted as acceptors. The density \nof P- and Sb-doped CuInS2 were almost the same as that of the CuInS2 single crystal grown by the \ntraveling heater method and non-doped sample grown by high pressure condition (>60 MPa). As-\nand Bi-doped samples with low resistivity had complex defects and/or two kinds of acceptor-type \ndefects .","subitem_description_language":"en","subitem_description_type":"Abstract"}]},"item_10002_publisher_8":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"宮崎大学工学部","subitem_publisher_language":"ja"},{"subitem_publisher":"Faculty of Engineering, University of Miyazaki","subitem_publisher_language":"en"}]},"item_10002_source_id_11":{"attribute_name":"item_10002_source_id_11","attribute_value_mlt":[{"subitem_source_identifier":"AA00732558","subitem_source_identifier_type":"NCID"}]},"item_10002_source_id_9":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"05404924","subitem_source_identifier_type":"ISSN"}]},"item_10002_version_type_20":{"attribute_name":"出版タイプ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_970fb48d4fbd8a85","subitem_version_type":"VoR"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"小牧, 弘典","creatorNameLang":"ja"},{"creatorName":"コマキ, ヒロノリ","creatorNameLang":"ja-Kana"},{"creatorName":"Komaki, 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Hot-Press Method","subitem_title_language":"en"}]},"item_type_id":"10002","owner":"9","path":["73","36","330","313"],"pubdate":{"attribute_name":"PubDate","attribute_value":"2007-06-28"},"publish_date":"2007-06-28","publish_status":"0","recid":"2508","relation_version_is_last":true,"title":["V族元素添加CuInS_2結晶のホットプレス成長"],"weko_creator_id":"9","weko_shared_id":-1},"updated":"2025-01-10T02:14:38.541014+00:00"}