{"created":"2023-05-15T09:58:31.595726+00:00","id":2496,"links":{},"metadata":{"_buckets":{"deposit":"a0a4759b-4039-4e42-af89-e9ee5f29739b"},"_deposit":{"created_by":5,"id":"2496","owner":"5","owners":[5],"pid":{"revision_id":0,"type":"depid","value":"2496"},"status":"published"},"_oai":{"id":"oai:miyazaki-u.repo.nii.ac.jp:00002496","sets":["73","73:36","73:36:330","73:36:330:322"]},"author_link":["12701","12699","12711","12703","12702","12710","12709","12700","12714","12713","12707","12712","12706","12061","12715","12704"],"item_10002_alternative_title_1":{"attribute_name":"その他（別言語等）のタイトル","attribute_value_mlt":[{"subitem_alternative_title":"Si1-xGex S/D p-MOSFET エノ デンシセン ショウシャ ニヨル デンキテキ トクセイ エノ エイキョウ ノ ヒョウカ","subitem_alternative_title_language":"ja-Kana"}]},"item_10002_biblio_info_7":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2012-07-30","bibliographicIssueDateType":"Issued"},"bibliographicPageEnd":"84","bibliographicPageStart":"79","bibliographicVolumeNumber":"41","bibliographic_titles":[{"bibliographic_title":"宮崎大学工学部紀要","bibliographic_titleLang":"ja"},{"bibliographic_title":"Memoirs of Faculty of Engineering, University of Miyazaki","bibliographic_titleLang":"en"}]}]},"item_10002_description_5":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"The effect of 2-MeV electron irradiation of Si_1-xGe_x S/D p-MOSFETs with different Ge concentration and gate length is studied. Before electron irradiation, effect of strain in Si channel is clearly observed that the maximum hole mobility increase and threshold voltage negative shift. After electron irradiation, the maximum hole mobility decreases with increasing electron fluence for all samples. In particular, in the case of high strain sample which have high Ge concentration and short channel, the maximum hole mobility drastically decreases by electron irradiation. Furthermore, it clearly observed that the amount of threshold voltage negative shifts which due to strain Si channel has decreased by electron irradiation. These degradations can be explained both by the lattice defects and the stress relaxation in the Si channel created by atomic displacements.","subitem_description_language":"en","subitem_description_type":"Abstract"}]},"item_10002_publisher_8":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"宮崎大学工学部","subitem_publisher_language":"ja"},{"subitem_publisher":"Faculty of Engineering, University of Miyazaki","subitem_publisher_language":"en"}]},"item_10002_source_id_11":{"attribute_name":"書誌レコードID","attribute_value_mlt":[{"subitem_source_identifier":"AA00732558","subitem_source_identifier_type":"NCID"}]},"item_10002_source_id_9":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"05404924","subitem_source_identifier_type":"ISSN"}]},"item_10002_version_type_20":{"attribute_name":"著者版フラグ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_970fb48d4fbd8a85","subitem_version_type":"VoR"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorAffiliations":[{"affiliationNameIdentifiers":[{"affiliationNameIdentifier":"","affiliationNameIdentifierScheme":"ISNI","affiliationNameIdentifierURI":"http://www.isni.org/isni/"}],"affiliationNames":[{"affiliationName":"","affiliationNameLang":"ja"}]}],"creatorNames":[{"creatorName":"中島, 敏之","creatorNameLang":"ja"},{"creatorName":"ナカシマ, 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Kenichiro","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Ohyama, Hidenori","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Simoen, Eddy","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Claeys, Cor","creatorNameLang":"en"}],"nameIdentifiers":[{}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2020-06-21"}],"displaytype":"detail","filename":"engineering41_79-84.pdf","filesize":[{"value":"1.3 MB"}],"format":"application/pdf","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"engineering41_79-84.pdf","url":"https://miyazaki-u.repo.nii.ac.jp/record/2496/files/engineering41_79-84.pdf"},"version_id":"cfdb15a9-0c93-46f3-bea6-001e13ab0364"}]},"item_keyword":{"attribute_name":"キーワード","attribute_value_mlt":[{"subitem_subject":"Strained Si, Radiation damage, MOSFET, Electron, Hole mobility","subitem_subject_language":"en","subitem_subject_scheme":"Other"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"jpn"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"departmental bulletin paper","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"Si1-xGex S/D p-MOSFETへの電子線照射による電気的特性への影響の評価","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"Si1-xGex S/D p-MOSFETへの電子線照射による電気的特性への影響の評価","subitem_title_language":"ja"},{"subitem_title":"Radiation Damage in Electrical Characteristic of Si1-xGex S/D p-MOSFET by Electron Irradiation","subitem_title_language":"en"}]},"item_type_id":"10002","owner":"5","path":["73","36","330","322"],"pubdate":{"attribute_name":"PubDate","attribute_value":"2012-10-26"},"publish_date":"2012-10-26","publish_status":"0","recid":"2496","relation_version_is_last":true,"title":["Si1-xGex S/D p-MOSFETへの電子線照射による電気的特性への影響の評価"],"weko_creator_id":"5","weko_shared_id":2},"updated":"2023-11-01T02:01:21.752956+00:00"}