@article{oai:miyazaki-u.repo.nii.ac.jp:00002496,
 author = {中島, 敏之 and Nakashima, Toshiyuki and 出本, 竜也 and 米岡, 将士 and 角田, 功 and 高倉, 健一郎 and 大山, 英典 and Yoshino, Kenji and 吉野, 賢二 and Simoen, E. and Claeys, C. and 中島, 敏之 and Nakashima, Toshiyuki and Idemoto, Tatsuya and Yoneoka, Masashi and Tsunoda, Isao and Takakura, Kenichiro and Ohyama, Hidenori and Simoen, Eddy and Claeys, Cor},
 journal = {宮崎大学工学部紀要, Memoirs of Faculty of Engineering, University of Miyazaki},
 month = {Jul},
 note = {The effect of 2-MeV electron irradiation of Si_1-xGe_x S/D p-MOSFETs with different Ge concentration and gate length is studied. Before electron irradiation, effect of strain in Si channel is clearly observed that the maximum hole mobility increase and threshold voltage negative shift. After electron irradiation, the maximum hole mobility decreases with increasing electron fluence for all samples. In particular, in the case of high strain sample which have high Ge concentration and short channel, the maximum hole mobility drastically decreases by electron irradiation. Furthermore, it clearly observed that the amount of threshold voltage negative shifts which due to strain Si channel has decreased by electron irradiation. These degradations can be explained both by the lattice defects and the stress relaxation in the Si channel created by atomic displacements.},
 pages = {79--84},
 title = {Si1-xGex S/D p-MOSFETへの電子線照射による電気的特性への影響の評価},
 volume = {41},
 year = {2012},
 yomi = {ナカシマ, トシユキ and イデモト, タツヤ and ヨネオカ, マサシ and ツノダ, イサオ and タカクラ , ケンイチロウ and オオヤマ, ヒデノリ and ヨシノ, ケンジ and ナカシマ, トシユキ}
}