@article{oai:miyazaki-u.repo.nii.ac.jp:00002486,
 author = {甲斐, 康之 and 境, 健太郎 and Sakai, Kentaro and Yokoyama, Hirosumi and 横山, 宏有 and Yoshino, Kenji and 吉野, 賢二 and Ikari, Tetsuo and 碇, 哲雄 and Maeda, Koji and 前田, 幸治 and Maeda, Kouji and Kai, Yasuyuki},
 journal = {宮崎大学工学部紀要, Memoirs of Faculty of Engineering, University of Miyazaki},
 month = {Jul},
 note = {Abstract 
The crystallization mechanism of GeSe2 bulk glass (glass transition temperature: around 
400℃) to so-called the low temperature GeSe2 crystalline phase was studied on the basis of 
nucleation and crystalline growth. Annealing process was carried out using differential scanning 
calorimeter. Some annealing conditions viz. temperature and time were varied to see their effect. 
Isothermal crystallization time became the shortest when samples were annealed at 330℃ for 30 
hours since the nucleation occurred at this condition. The value of activation energy of the 
crystallization increased after the annealing. The crystallization process was found to follow a 
three-dimensional growth as given by JMA equation.},
 pages = {129--133},
 title = {熱処理によるGeSe_2ガラスの結晶核生成過程の研究},
 volume = {32},
 year = {2003},
 yomi = {カイ, ヤスユキ and サカイ, ケンタロウ and ヨコヤマ, ヒロスミ and ヨシノ, ケンジ and イカリ, テツオ and マエダ, コウジ}
}