{"created":"2023-05-15T09:58:30.248167+00:00","id":2474,"links":{},"metadata":{"_buckets":{"deposit":"c33977e0-8f01-4339-a2d9-01103badc3e3"},"_deposit":{"created_by":5,"id":"2474","owner":"5","owners":[5],"pid":{"revision_id":0,"type":"depid","value":"2474"},"status":"published"},"_oai":{"id":"oai:miyazaki-u.repo.nii.ac.jp:00002474","sets":["73","73:36","73:36:330","73:36:330:316"]},"author_link":["5540","5539","12555","12558"],"item_10002_alternative_title_1":{"attribute_name":"その他（別言語等）のタイトル","attribute_value_mlt":[{"subitem_alternative_title":"シリコン ウェハ セイゾウ ノ エッチング プロセス ニ オケル カガク ハンノウ オ トモナウ ナガレ ノ スウチ カイセキ","subitem_alternative_title_language":"ja-Kana"}]},"item_10002_biblio_info_7":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2006-08-30","bibliographicIssueDateType":"Issued"},"bibliographicPageEnd":"236","bibliographicPageStart":"229","bibliographicVolumeNumber":"35","bibliographic_titles":[{"bibliographic_title":"宮崎大学工学部紀要","bibliographic_titleLang":"ja"},{"bibliographic_title":"Memoirs of Faculty of Engineering, University of Miyazaki","bibliographic_titleLang":"en"}]}]},"item_10002_description_5":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"Abstract \nWhen silicon ingots are cut into silicon wafers, work-affected layers are made on surfaces of \nthe wafers. These layers are removed in the chemical etching process. Recently, requested \nspecifications for the flatness of silicon wafers become threatening. Then, numerical analysis of \nflows around wafers with chemical reactions is very important. Rotating silicon wafers (circular \ndisks) and stationary circular disks are set coaxially with alternation array in the etching bath. \nChemical reaction is composed of two stages. The first stage is oxidation with nitric acid, and \nthe second is hydrofluoric acid treatment. Owing to the CFD results, oxidation with nitric acid is \nactive near the tip of rotated circular disks. Secondary flows between rotating and stationary \ndisks are influenced with sizes of stationary disks. The stationary disks with smaller size make \nsecondary flows decrease. Then, the chemical reaction rate of hydrofluoric acid is enhanced \nwith smaller stationary disks and is speeded up near the tip of the wafer.","subitem_description_language":"en","subitem_description_type":"Abstract"}]},"item_10002_publisher_8":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"宮崎大学工学部","subitem_publisher_language":"ja"},{"subitem_publisher":"Faculty of Engineering, University of Miyazaki","subitem_publisher_language":"en"}]},"item_10002_source_id_11":{"attribute_name":"書誌レコードID","attribute_value_mlt":[{"subitem_source_identifier":"AA00732558","subitem_source_identifier_type":"NCID"}]},"item_10002_source_id_9":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"05404924","subitem_source_identifier_type":"ISSN"}]},"item_10002_version_type_20":{"attribute_name":"著者版フラグ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_970fb48d4fbd8a85","subitem_version_type":"VoR"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"平野, 公孝","creatorNameLang":"ja"},{"creatorName":"ヒラノ, キミタカ","creatorNameLang":"ja-Kana"},{"creatorName":"Hirano, Kimitaka","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"菊地, 正憲"},{"creatorName":"キクチ, マサノリ","creatorNameLang":"ja-Kana"},{"creatorName":"Kikuchi, Masanori","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"外山, 雅士","creatorNameLang":"ja"},{"creatorName":"トヤマ, マサオ","creatorNameLang":"ja-Kana"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Toyama, Masao","creatorNameLang":"en"}],"nameIdentifiers":[{}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2020-06-21"}],"displaytype":"detail","filename":"KJ00004439515.pdf","filesize":[{"value":"870.5 kB"}],"format":"application/pdf","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"KJ00004439515.pdf","url":"https://miyazaki-u.repo.nii.ac.jp/record/2474/files/KJ00004439515.pdf"},"version_id":"c3b6ccea-32c4-4962-9b91-11d4a0613a74"}]},"item_keyword":{"attribute_name":"キーワード","attribute_value_mlt":[{"subitem_subject":"Numerical simulation, Flow, Rotated disk, Silicon wafer, Etching process, Chemical reaction","subitem_subject_language":"en","subitem_subject_scheme":"Other"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"jpn"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"departmental bulletin paper","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"シリコンウェハ製造のエッチングプロセスにおける化学反応を伴う流れの数値解析","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"シリコンウェハ製造のエッチングプロセスにおける化学反応を伴う流れの数値解析","subitem_title_language":"ja"},{"subitem_title":"Numerical Analysis of Flows with Chemical Reactions in the Etching Process for Silicon Wafers","subitem_title_language":"en"}]},"item_type_id":"10002","owner":"5","path":["73","36","330","316"],"pubdate":{"attribute_name":"PubDate","attribute_value":"2007-06-28"},"publish_date":"2007-06-28","publish_status":"0","recid":"2474","relation_version_is_last":true,"title":["シリコンウェハ製造のエッチングプロセスにおける化学反応を伴う流れの数値解析"],"weko_creator_id":"5","weko_shared_id":2},"updated":"2023-07-29T23:34:13.620773+00:00"}