@article{oai:miyazaki-u.repo.nii.ac.jp:00002474,
 author = {平野, 公孝 and Hirano, Kimitaka and 菊地, 正憲 and Kikuchi, Masanori and 外山, 雅士 and Toyama, Masao},
 journal = {宮崎大学工学部紀要, Memoirs of Faculty of Engineering, University of Miyazaki},
 month = {Aug},
 note = {Abstract 
When silicon ingots are cut into silicon wafers, work-affected layers are made on surfaces of 
the wafers. These layers are removed in the chemical etching process. Recently, requested 
specifications for the flatness of silicon wafers become threatening. Then, numerical analysis of 
flows around wafers with chemical reactions is very important. Rotating silicon wafers (circular 
disks) and stationary circular disks are set coaxially with alternation array in the etching bath. 
Chemical reaction is composed of two stages. The first stage is oxidation with nitric acid, and 
the second is hydrofluoric acid treatment. Owing to the CFD results, oxidation with nitric acid is 
active near the tip of rotated circular disks. Secondary flows between rotating and stationary 
disks are influenced with sizes of stationary disks. The stationary disks with smaller size make 
secondary flows decrease. Then, the chemical reaction rate of hydrofluoric acid is enhanced 
with smaller stationary disks and is speeded up near the tip of the wafer.},
 pages = {229--236},
 title = {シリコンウェハ製造のエッチングプロセスにおける化学反応を伴う流れの数値解析},
 volume = {35},
 year = {2006},
 yomi = {ヒラノ, キミタカ and キクチ, マサノリ and トヤマ, マサオ}
}