@article{oai:miyazaki-u.repo.nii.ac.jp:00002460,
 author = {Matsuo, Hitoshi and 松尾, 整 and Yoshino, Kenji and 吉野, 賢二 and Ikari, Tetsuo and 碇, 哲雄 and Matsuo, Hitoshi and 松尾, 整},
 journal = {宮崎大学工学部紀要, Memoirs of Faculty of Engineering, University of Miyazaki},
 month = {Aug},
 note = {Abstract 
AgGaSe2 thin film was deposited on glass substrates by vacuum evaporation method. The 
starting material was mixed Ag2Se and Ga2Se3 powders. Ag/Ga ratios were 1.5, 1.2, 1.O, 0.8, 0.7 
and 0.4. The samples were annealed from 100 to 600 ℃ for 10 min. After these processes, 
single phase AgGaSe2 thin films could be obtained except Ag/Ga ratio of 0.4 at annealing 
temperature of 600 ℃. Ag-rich samples had large grain. On the other hand, Ga-rich samples 
had small grain. Furthermore, Ga-rich and Ag-rich samples indicated p-type and n-type because 
of Ag vacancy and Se vacancy, respectively.},
 pages = {137--144},
 title = {カルコパイライト型半導体AgGaSe2の組成依存性},
 volume = {35},
 year = {2006},
 yomi = {マツオ, ヒトシ and ヨシノ, ケンジ and イカリ, テツオ and マツオ, ヒトシ}
}