@article{oai:miyazaki-u.repo.nii.ac.jp:00002459,
 author = {安田, 慎太郎 and Yasuda, Shintaro and 大村, 拓泰 and 黒川, 英太郎 and Kurokawa, Eitaro and 尾関, 雅志 and Ozeki, Masashi and Ikari, Tetsuo and 碇, 哲雄 and Maeda, Koji and 前田, 幸治 and Maeda, Kouji and 安田, 慎太郎 and Yasuda, Shintaro and Omura, Hiroyasu and 黒川, 英太郎 and Kurokawa, Eitaro},
 journal = {宮崎大学工学部紀要, Memoirs of Faculty of Engineering, University of Miyazaki},
 month = {Aug},
 note = {Abstract 
Photoluminescence(PL) spectra were measured on Si-doped GaAs grown by molecular beam 
epitaxy at 77K and room temperature. The electron concentration of the samples are ranged from 
4.1xl0 16cm-3 to 4.7xl0 18cm-3. Band-gap, tailing of the conduction band and Fermi energy were 
calculated from the line-shape analysis of PL spectra using the model of Kane. We observed Burstein 
Moss shift and determined band-gap narrowing as a function of the electron concentration. These 
results are agreed with previous results. The methods are useful to analyze heavy doped GaAs for 
other kind of impurities.},
 pages = {131--135},
 title = {フォトルミネッセンス法による高濃度SiドープGaAsのバンドギャップとフェルミエネルギーの決定},
 volume = {35},
 year = {2006},
 yomi = {ヤスダ, シンタロウ and オオムラ, ヒロヤス and クロカワ, エイタロウ and オゼキ, マサシ and イカリ, テツオ and マエダ, コウジ and ヤスダ, シンタロウ and クロカワ, エイタロウ}
}