{"created":"2023-05-15T09:58:29.393636+00:00","id":2456,"links":{},"metadata":{"_buckets":{"deposit":"56dec906-3b7c-44e9-b87d-79027d5b2b98"},"_deposit":{"created_by":5,"id":"2456","owner":"5","owners":[5],"pid":{"revision_id":0,"type":"depid","value":"2456"},"status":"published"},"_oai":{"id":"oai:miyazaki-u.repo.nii.ac.jp:00002456","sets":["73","73:36","73:36:330","73:36:330:316"]},"author_link":["12428","12426","12038","12425"],"item_10002_alternative_title_1":{"attribute_name":"その他（別言語等）のタイトル","attribute_value_mlt":[{"subitem_alternative_title":"PLDホウ ニ オケル ハクマク セイチョウ ショキ カテイ ノ カンサツ","subitem_alternative_title_language":"ja-Kana"}]},"item_10002_biblio_info_7":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2006-08-30","bibliographicIssueDateType":"Issued"},"bibliographicPageEnd":"117","bibliographicPageStart":"113","bibliographicVolumeNumber":"35","bibliographic_titles":[{"bibliographic_title":"宮崎大学工学部紀要","bibliographic_titleLang":"ja"},{"bibliographic_title":"Memoirs of Faculty of Engineering, University of Miyazaki","bibliographic_titleLang":"en"}]}]},"item_10002_description_5":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"However the PLD method is widely used for fabrication of the various films, information of an\ninterface between the substrate and the film, which is a key for the quality of the film, has not been clarified\nwell. Because it is difficult to observe the interface through the deposited film, we have tried to observe the\nadhesion process of atoms which compose the film onto the substrate surface. We used the STM for\nobservation and the TOF analyzer for identification of the particles generated by PLD process. Si(111)\nsurface which had been cleaned by the high temperature thermal etching method was used as a substrate. In\nthis work, Fe was used as a target material in order to observe the simplified interaction between Fe and Si\natoms intended to understand the initial stage of formation of β-FeSi2 films onto the Si substrate. A\nNd:YAG2ω(532 nm) used for PLD. As a result, we found that three kinds of sites where the Fe atoms were\npreferably adsorbed. One is the centre of three comer holes of Si(lll) 7x7 structure. Another is the\nintermediate of the two corner holes, the other is beside of corner hole. In the former case, special shape iron\ncluster is adsorbed and latter two cases, ellipsoidal shape cluster is adsorbed.","subitem_description_language":"en","subitem_description_type":"Abstract"}]},"item_10002_publisher_8":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"宮崎大学工学部","subitem_publisher_language":"ja"},{"subitem_publisher":"Faculty of Engineering, University of Miyazaki","subitem_publisher_language":"en"}]},"item_10002_source_id_11":{"attribute_name":"書誌レコードID","attribute_value_mlt":[{"subitem_source_identifier":"AA00732558","subitem_source_identifier_type":"NCID"}]},"item_10002_source_id_9":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"05404924","subitem_source_identifier_type":"ISSN"}]},"item_10002_version_type_20":{"attribute_name":"著者版フラグ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_970fb48d4fbd8a85","subitem_version_type":"VoR"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"吉田, 智司","creatorNameLang":"ja"},{"creatorName":"ヨシダ, サトシ","creatorNameLang":"ja-Kana"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"中村, 幸司"},{"creatorName":"ナカムラ, コウジ","creatorNameLang":"ja-Kana"},{"creatorName":"Nakamura, Koji","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorAffiliations":[{"affiliationNameIdentifiers":[{"affiliationNameIdentifier":"","affiliationNameIdentifierScheme":"ISNI","affiliationNameIdentifierURI":"http://www.isni.org/isni/"}],"affiliationNames":[{"affiliationName":"","affiliationNameLang":"ja"}]}],"creatorNames":[{"creatorName":"Yokotani, Atsushi","creatorNameLang":"en"},{"creatorName":"横谷, 篤至","creatorNameLang":"ja"},{"creatorName":"ヨコタニ, アツシ","creatorNameLang":"ja-Kana"}],"familyNames":[{},{},{}],"givenNames":[{},{},{}],"nameIdentifiers":[{},{}]},{"creatorNames":[{"creatorName":"Yoshida, Satoshi","creatorNameLang":"en"}],"nameIdentifiers":[{}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2020-06-21"}],"displaytype":"detail","filename":"KJ00004439498.pdf","filesize":[{"value":"1.5 MB"}],"format":"application/pdf","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"KJ00004439498.pdf","url":"https://miyazaki-u.repo.nii.ac.jp/record/2456/files/KJ00004439498.pdf"},"version_id":"0c3f4a3a-ed79-4a2b-904d-4686c2d90a9c"}]},"item_keyword":{"attribute_name":"キーワード","attribute_value_mlt":[{"subitem_subject":"PLD, STM, TOF, Si(111), Atomic level, Surface, Fe, FeSi2, Ablation","subitem_subject_language":"en","subitem_subject_scheme":"Other"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"jpn"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"departmental bulletin paper","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"PLD法における薄膜成長初期過程の観察","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"PLD法における薄膜成長初期過程の観察","subitem_title_language":"ja"},{"subitem_title":"Observation of initial stage of a film formation by PLD onto Si clean surface","subitem_title_language":"en"}]},"item_type_id":"10002","owner":"5","path":["73","36","330","316"],"pubdate":{"attribute_name":"PubDate","attribute_value":"2007-06-28"},"publish_date":"2007-06-28","publish_status":"0","recid":"2456","relation_version_is_last":true,"title":["PLD法における薄膜成長初期過程の観察"],"weko_creator_id":"5","weko_shared_id":2},"updated":"2023-09-06T06:19:45.000128+00:00"}