@article{oai:miyazaki-u.repo.nii.ac.jp:00002456,
 author = {吉田, 智司 and 中村, 幸司 and Nakamura, Koji and Yokotani, Atsushi and 横谷, 篤至 and Yoshida, Satoshi},
 journal = {宮崎大学工学部紀要, Memoirs of Faculty of Engineering, University of Miyazaki},
 month = {Aug},
 note = {However the PLD method is widely used for fabrication of the various films, information of an
interface between the substrate and the film, which is a key for the quality of the film, has not been clarified
well. Because it is difficult to observe the interface through the deposited film, we have tried to observe the
adhesion process of atoms which compose the film onto the substrate surface. We used the STM for
observation and the TOF analyzer for identification of the particles generated by PLD process. Si(111)
surface which had been cleaned by the high temperature thermal etching method was used as a substrate. In
this work, Fe was used as a target material in order to observe the simplified interaction between Fe and Si
atoms intended to understand the initial stage of formation of β-FeSi2 films onto the Si substrate. A
Nd:YAG2ω(532 nm) used for PLD. As a result, we found that three kinds of sites where the Fe atoms were
preferably adsorbed. One is the centre of three comer holes of Si(lll) 7x7 structure. Another is the
intermediate of the two corner holes, the other is beside of corner hole. In the former case, special shape iron
cluster is adsorbed and latter two cases, ellipsoidal shape cluster is adsorbed.},
 pages = {113--117},
 title = {PLD法における薄膜成長初期過程の観察},
 volume = {35},
 year = {2006},
 yomi = {ヨシダ, サトシ and ナカムラ, コウジ and ヨコタニ, アツシ}
}