@article{oai:miyazaki-u.repo.nii.ac.jp:00002454,
 author = {川尻, 晋平 and Kawashiri, Shinpei and 楊, 鍾煥 and 井上, 大士 and Sung, Youl-Moon and Sung, Youl Moon and 成, 烈汶 and 大坪, 昌久 and Otsubo, Masahisa and 本田, 親久 and Honda, Chikahisa and 川尻, 晋平 and Kawashiri, Shinpei and Yang, Jong Hwan and Inoue, Daishi and Sung, Youl-Moon and Sung, Youl Moon and 成, 烈汶},
 journal = {宮崎大学工学部紀要, Memoirs of Faculty of Engineering, University of Miyazaki},
 month = {Aug},
 note = {Recently, the big diameter making of the wafer is rapidly advanced with the ultrafine processing
technology of 0.1μm in the minimum in recent semiconductor manufacturing process line width in the
process of the semiconductor. Then, the plasma source by which a uniform process in a large area can
be done is requested. Then, the NLD (Neutral Loop Discharge) plasma was proposed. Because the
NLD plasma can dynamically control impossible plasma in past plasma, a highly effective process
can be done. However, it is a current state of being limited from the structure only to the etching field
now, We have aimed to pioneer the NLD plasma to a new field by applying a peculiar concept of the
NLD plasma to the CNT (Carbon Nanotubes) making.},
 pages = {101--106},
 title = {磁気中性線放電プラズマを用いたカーボンナノチューブの作製},
 volume = {35},
 year = {2006},
 yomi = {カワシリ, シンペイ and イノウエ, ダイシ and ソン, ヤルブン and オオツボ, マサヒサ and ホンダ, チカヒサ and カワシリ, シンペイ and ソン, ヤルブン}
}