{"created":"2023-05-15T09:58:28.959642+00:00","id":2446,"links":{},"metadata":{"_buckets":{"deposit":"a362fabd-f360-4d72-88e6-62bee5943a60"},"_deposit":{"created_by":9,"id":"2446","owner":"5","owners":[9],"pid":{"revision_id":0,"type":"depid","value":"2446"},"status":"published"},"_oai":{"id":"oai:miyazaki-u.repo.nii.ac.jp:00002446","sets":["73","73:36","73:36:330","73:36:330:316"]},"author_link":["12447","11920","12445","12047","12447","12445"],"item_10002_alternative_title_1":{"attribute_name":"その他（別言語等）のタイトル","attribute_value_mlt":[{"subitem_alternative_title":"ブンシセン エピタキシーホウ ニ ヨル MnAs オヨビ GaMnAs セイチョウ カテイ ノ ケンキュウ","subitem_alternative_title_language":"ja-Kana"}]},"item_10002_biblio_info_7":{"attribute_name":"bibliographic_information","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2006-08-30","bibliographicIssueDateType":"Issued"},"bibliographicPageEnd":"64","bibliographicPageStart":"59","bibliographicVolumeNumber":"35","bibliographic_titles":[{"bibliographic_title":"宮崎大学工学部紀要","bibliographic_titleLang":"ja"},{"bibliographic_title":"Memoirs of Faculty of Engineering, University of Miyazaki","bibliographic_titleLang":"en"}]}]},"item_10002_description_5":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"Abstract \nMnAs and GaMnAS Were grown by low-temperature molecular beam epitaxy on \nGaAs(OO1) substrate. Reflection high energy diffraction (RHEED) and the X-ray \ndiffraction (XRD) measurements showed that MnAs (11OO) was parallel to the \nGaAs(OO1). The surface morphology of grown layers had a strong correlation with \nthe growth rate and the island appearance in the initial stage of the growth. From the \nXRD measurement the lattice constant of GaMnAs was found to deviate from \nVegard's law for a larger Mn content.","subitem_description_language":"en","subitem_description_type":"Abstract"}]},"item_10002_publisher_8":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"宮崎大学工学部","subitem_publisher_language":"ja"},{"subitem_publisher":"Faculty of Engineering, University of Miyazaki","subitem_publisher_language":"en"}]},"item_10002_source_id_11":{"attribute_name":"item_10002_source_id_11","attribute_value_mlt":[{"subitem_source_identifier":"AA00732558","subitem_source_identifier_type":"NCID"}]},"item_10002_source_id_9":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"05404924","subitem_source_identifier_type":"ISSN"}]},"item_10002_version_type_20":{"attribute_name":"出版タイプ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_970fb48d4fbd8a85","subitem_version_type":"VoR"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"黒川, 英太郎","creatorNameLang":"ja"},{"creatorName":"クロカワ, エイタロウ","creatorNameLang":"ja-Kana"},{"creatorName":"Kurokawa, 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Epitaxy","subitem_title_language":"en"}]},"item_type_id":"10002","owner":"9","path":["73","36","330","316"],"pubdate":{"attribute_name":"PubDate","attribute_value":"2007-06-28"},"publish_date":"2007-06-28","publish_status":"0","recid":"2446","relation_version_is_last":true,"title":["分子線エピタキシー法によるMnAsおよびGaMnAs成長過程の研究"],"weko_creator_id":"9","weko_shared_id":-1},"updated":"2024-12-06T11:32:33.959067+00:00"}