@article{oai:miyazaki-u.repo.nii.ac.jp:00002446,
 author = {黒川, 英太郎 and Kurokawa, Eitaro and 尾関, 雅志 and Ozeki, Masashi and 安田, 慎太郎 and Yasuda, Shintaro and Maeda, Koji and 前田, 幸治 and Maeda, Kouji and 黒川, 英太郎 and Kurokawa, Eitaro and 安田, 慎太郎 and Yasuda, Shintaro},
 journal = {宮崎大学工学部紀要, Memoirs of Faculty of Engineering, University of Miyazaki},
 month = {Aug},
 note = {Abstract 
MnAs and GaMnAS Were grown by low-temperature molecular beam epitaxy on 
GaAs(OO1) substrate. Reflection high energy diffraction (RHEED) and the X-ray 
diffraction (XRD) measurements showed that MnAs (11OO) was parallel to the 
GaAs(OO1). The surface morphology of grown layers had a strong correlation with 
the growth rate and the island appearance in the initial stage of the growth. From the 
XRD measurement the lattice constant of GaMnAs was found to deviate from 
Vegard's law for a larger Mn content.},
 pages = {59--64},
 title = {分子線エピタキシー法によるMnAsおよびGaMnAs成長過程の研究},
 volume = {35},
 year = {2006},
 yomi = {クロカワ, エイタロウ and オゼキ, マサシ and ヤスダ, シンタロウ and マエダ, コウジ and クロカワ, エイタロウ and ヤスダ, シンタロウ}
}