{"created":"2023-05-15T09:58:28.741357+00:00","id":2441,"links":{},"metadata":{"_buckets":{"deposit":"14b63c69-969a-4487-8922-df8857fbad1d"},"_deposit":{"created_by":5,"id":"2441","owner":"5","owners":[5],"pid":{"revision_id":0,"type":"depid","value":"2441"},"status":"published"},"_oai":{"id":"oai:miyazaki-u.repo.nii.ac.jp:00002441","sets":["73","73:36","73:36:330","73:36:330:316"]},"author_link":["12284","7725","12265","17794","12279","12260","12263"],"item_10002_alternative_title_1":{"attribute_name":"その他（別言語等）のタイトル","attribute_value_mlt":[{"subitem_alternative_title":"チッソ イオン チュウニュウ Si オヨビ Si サンカマクタン ニ ショウジル コウシ ケッカン ノ カンサツ ト ヒョウカ","subitem_alternative_title_language":"ja-Kana"}]},"item_10002_biblio_info_7":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2006-08-30","bibliographicIssueDateType":"Issued"},"bibliographicPageEnd":"40","bibliographicPageStart":"37","bibliographicVolumeNumber":"35","bibliographic_titles":[{"bibliographic_title":"宮崎大学工学部紀要","bibliographic_titleLang":"ja"},{"bibliographic_title":"Memoirs of Faculty of Engineering, University of Miyazaki","bibliographic_titleLang":"en"}]}]},"item_10002_description_5":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"Abstract \nThe damage generated by nitrogen ion implantation into silicon wafer was recovered by \nheat treatment, and research of seeing the recovery process was done. Lattice defects at the \nedges of the nitrogen ion implanted region and of oxide film were observed by \nTEM(Transmission Electron Microscope) after the heat-treatment. At the edge of the \nimplanted region segregations, may be nitrides, were observed, while at the edge of the oxide \nfilm dislocations concentrated along a line were observed. The number of dislocations \nobserved at the film edge were decreased with annealing temperature, and only a few \ndislocations were observed in the specimen annealed at 550℃.","subitem_description_language":"en","subitem_description_type":"Abstract"}]},"item_10002_publisher_8":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"宮崎大学工学部","subitem_publisher_language":"ja"},{"subitem_publisher":"Faculty of Engineering, University of Miyazaki","subitem_publisher_language":"en"}]},"item_10002_source_id_11":{"attribute_name":"書誌レコードID","attribute_value_mlt":[{"subitem_source_identifier":"AA00732558","subitem_source_identifier_type":"NCID"}]},"item_10002_source_id_9":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"05404924","subitem_source_identifier_type":"ISSN"}]},"item_10002_version_type_20":{"attribute_name":"著者版フラグ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_970fb48d4fbd8a85","subitem_version_type":"VoR"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"木原, 幸太郎","creatorNameLang":"ja"},{"creatorName":"キハラ, コウタロウ","creatorNameLang":"ja-Kana"}],"nameIdentifiers":[{}]},{"creatorAffiliations":[{"affiliationNameIdentifiers":[{"affiliationNameIdentifier":"","affiliationNameIdentifierScheme":"ISNI","affiliationNameIdentifierURI":"http://www.isni.org/isni/"}],"affiliationNames":[{"affiliationName":"","affiliationNameLang":"ja"}]}],"creatorNames":[{"creatorName":"黒木, 正子","creatorNameLang":"ja"},{"creatorName":"クロキ, マサコ","creatorNameLang":"ja-Kana"},{"creatorName":"Kuroki, Masako","creatorNameLang":"en"}],"familyNames":[{},{},{}],"givenNames":[{},{},{}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"福森, 太一郎","creatorNameLang":"ja"},{"creatorName":"フクモリ, タイチロウ","creatorNameLang":"ja-Kana"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"明石, 義人","creatorNameLang":"ja"},{"creatorName":"アカシ, ヨシト","creatorNameLang":"ja-Kana"},{"creatorName":"Akashi, Yoshito","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"二神, 光次","creatorNameLang":"ja"},{"creatorName":"フタカミ, コウジ","creatorNameLang":"ja-Kana"},{"creatorName":"Futagami, Koji","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Kihara, Koutarou","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorAffiliations":[{"affiliationNameIdentifiers":[{"affiliationNameIdentifier":"","affiliationNameIdentifierScheme":"ISNI","affiliationNameIdentifierURI":"http://www.isni.org/isni/"}],"affiliationNames":[{"affiliationName":"","affiliationNameLang":"ja"}]}],"creatorNames":[{"creatorName":"黒木, 正子","creatorNameLang":"ja"},{"creatorName":"クロキ, マサコ","creatorNameLang":"ja-Kana"},{"creatorName":"Kuroki, Masako","creatorNameLang":"en"}],"familyNames":[{},{},{}],"givenNames":[{},{},{}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Fukumori, Taichiro","creatorNameLang":"en"}],"nameIdentifiers":[{}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2020-06-21"}],"displaytype":"detail","filename":"KJ00004439485.pdf","filesize":[{"value":"1.1 MB"}],"format":"application/pdf","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"KJ00004439485.pdf","url":"https://miyazaki-u.repo.nii.ac.jp/record/2441/files/KJ00004439485.pdf"},"version_id":"158705cf-3189-4064-83cf-937e16319f27"}]},"item_keyword":{"attribute_name":"キーワード","attribute_value_mlt":[{"subitem_subject":"Nitrogen ion implantation, Silicon, Oxide film, TEM, Dislocations","subitem_subject_language":"en","subitem_subject_scheme":"Other"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"jpn"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"departmental bulletin paper","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"窒素イオン注入Si及びSi酸化膜端に生じる格子欠陥の観察と評価","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"窒素イオン注入Si及びSi酸化膜端に生じる格子欠陥の観察と評価","subitem_title_language":"ja"},{"subitem_title":"TEM Observation of Lattice Defects in Si Generated by the Nitrogen Ion Implantation and by the Oxide Film","subitem_title_language":"en"}]},"item_type_id":"10002","owner":"5","path":["73","36","330","316"],"pubdate":{"attribute_name":"PubDate","attribute_value":"2007-06-28"},"publish_date":"2007-06-28","publish_status":"0","recid":"2441","relation_version_is_last":true,"title":["窒素イオン注入Si及びSi酸化膜端に生じる格子欠陥の観察と評価"],"weko_creator_id":"5","weko_shared_id":2},"updated":"2023-10-11T05:46:17.659443+00:00"}