@article{oai:miyazaki-u.repo.nii.ac.jp:00002441,
 author = {木原, 幸太郎 and 黒木, 正子 and Kuroki, Masako and 福森, 太一郎 and 明石, 義人 and Akashi, Yoshito and 二神, 光次 and Futagami, Koji and Kihara, Koutarou and 黒木, 正子 and Kuroki, Masako and Fukumori, Taichiro},
 journal = {宮崎大学工学部紀要, Memoirs of Faculty of Engineering, University of Miyazaki},
 month = {Aug},
 note = {Abstract 
The damage generated by nitrogen ion implantation into silicon wafer was recovered by 
heat treatment, and research of seeing the recovery process was done. Lattice defects at the 
edges of the nitrogen ion implanted region and of oxide film were observed by 
TEM(Transmission Electron Microscope) after the heat-treatment. At the edge of the 
implanted region segregations, may be nitrides, were observed, while at the edge of the oxide 
film dislocations concentrated along a line were observed. The number of dislocations 
observed at the film edge were decreased with annealing temperature, and only a few 
dislocations were observed in the specimen annealed at 550℃.},
 pages = {37--40},
 title = {窒素イオン注入Si及びSi酸化膜端に生じる格子欠陥の観察と評価},
 volume = {35},
 year = {2006},
 yomi = {キハラ, コウタロウ and クロキ, マサコ and フクモリ, タイチロウ and アカシ, ヨシト and フタカミ, コウジ and クロキ, マサコ}
}