{"created":"2023-05-15T09:58:28.699175+00:00","id":2440,"links":{},"metadata":{"_buckets":{"deposit":"87fbeb54-e05c-41ca-a2bf-19bb96bf1e62"},"_deposit":{"created_by":5,"id":"2440","owner":"5","owners":[5],"pid":{"revision_id":0,"type":"depid","value":"2440"},"status":"published"},"_oai":{"id":"oai:miyazaki-u.repo.nii.ac.jp:00002440","sets":["73","73:36","73:36:330","73:36:330:316"]},"author_link":["12274","7725","12265","17794","12260","12269","12263"],"item_10002_alternative_title_1":{"attribute_name":"その他（別言語等）のタイトル","attribute_value_mlt":[{"subitem_alternative_title":"Xセン トポグラフィ ニ ヨル Si ケッショウ ヒョウメンカ ノ コウシワイ ノ カイセキ","subitem_alternative_title_language":"ja-Kana"}]},"item_10002_biblio_info_7":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2006-08-30","bibliographicIssueDateType":"Issued"},"bibliographicPageEnd":"35","bibliographicPageStart":"31","bibliographicVolumeNumber":"35","bibliographic_titles":[{"bibliographic_title":"宮崎大学工学部紀要","bibliographic_titleLang":"ja"},{"bibliographic_title":"Memoirs of Faculty of Engineering, University of Miyazaki","bibliographic_titleLang":"en"}]}]},"item_10002_description_5":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"Abstract \nThe X-ray reflection topography under simultaneously stimulated total reflection is applied to \nanalyze the lattice distortion just beneath the Si surface. \nContrast change of the lattice distortion caused by the heat-treatment at the edge of the nitrogen ion \nimplanted region silicon was evaluated contrast change from a systematic topographs taken at \nangles around the Bragg diffraction.The lattice distortion generated by annealing at the edge of the \noxide film is also evaluated. \nThe ratio of the contrast at the edge of implanted region over the averaged intensity of specimen \nis evaluated by transparented light intensity of films.And these ratios in a systematic topographs \naround the Bragg diffraction are plotted against the angles at which the topographs are taken. \nFrom this plot the difference in diffraction angle between average diffraction and edge contrast is \nobtained as 20\" at the inner region and 15\" at the outer region.","subitem_description_language":"en","subitem_description_type":"Abstract"}]},"item_10002_publisher_8":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"宮崎大学工学部","subitem_publisher_language":"ja"},{"subitem_publisher":"Faculty of Engineering, University of Miyazaki","subitem_publisher_language":"en"}]},"item_10002_source_id_11":{"attribute_name":"書誌レコードID","attribute_value_mlt":[{"subitem_source_identifier":"AA00732558","subitem_source_identifier_type":"NCID"}]},"item_10002_source_id_9":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"05404924","subitem_source_identifier_type":"ISSN"}]},"item_10002_version_type_20":{"attribute_name":"著者版フラグ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_970fb48d4fbd8a85","subitem_version_type":"VoR"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"麻生, 貴之","creatorNameLang":"ja"},{"creatorName":"アソウ, タカユキ","creatorNameLang":"ja-Kana"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"福森, 太一郎"},{"creatorName":"フクモリ, タイチロウ","creatorNameLang":"ja-Kana"}],"nameIdentifiers":[{}]},{"creatorAffiliations":[{"affiliationNameIdentifiers":[{"affiliationNameIdentifier":"","affiliationNameIdentifierScheme":"ISNI","affiliationNameIdentifierURI":"http://www.isni.org/isni/"}],"affiliationNames":[{"affiliationName":"","affiliationNameLang":"ja"}]}],"creatorNames":[{"creatorName":"黒木, 正子","creatorNameLang":"ja"},{"creatorName":"クロキ, マサコ","creatorNameLang":"ja-Kana"},{"creatorName":"Kuroki, Masako","creatorNameLang":"en"}],"familyNames":[{},{},{}],"givenNames":[{},{},{}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"明石, 義人","creatorNameLang":"ja"},{"creatorName":"アカシ, ヨシト","creatorNameLang":"ja-Kana"},{"creatorName":"Akashi, Yoshito","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"二神, 光次","creatorNameLang":"ja"},{"creatorName":"フタカミ, コウジ","creatorNameLang":"ja-Kana"},{"creatorName":"Futagami, Koji","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Aso, Takayuki","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Fukumori, Taichiro","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorAffiliations":[{"affiliationNameIdentifiers":[{"affiliationNameIdentifier":"","affiliationNameIdentifierScheme":"ISNI","affiliationNameIdentifierURI":"http://www.isni.org/isni/"}],"affiliationNames":[{"affiliationName":"","affiliationNameLang":"ja"}]}],"creatorNames":[{"creatorName":"黒木, 正子","creatorNameLang":"ja"},{"creatorName":"クロキ, マサコ","creatorNameLang":"ja-Kana"},{"creatorName":"Kuroki, Masako","creatorNameLang":"en"}],"familyNames":[{},{},{}],"givenNames":[{},{},{}],"nameIdentifiers":[{}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2020-06-21"}],"displaytype":"detail","filename":"KJ00004439484.pdf","filesize":[{"value":"915.3 kB"}],"format":"application/pdf","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"KJ00004439484.pdf","url":"https://miyazaki-u.repo.nii.ac.jp/record/2440/files/KJ00004439484.pdf"},"version_id":"d79861fb-9e3c-4c7b-ad33-888d5e01ef1c"}]},"item_keyword":{"attribute_name":"キーワード","attribute_value_mlt":[{"subitem_subject":"X-ray reflection topography, Lattice distortion, Total reflection, Silicon, Annealing","subitem_subject_language":"en","subitem_subject_scheme":"Other"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"jpn"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"departmental bulletin paper","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"X線トポグラフィによるSi結晶表面下の格子歪の解析","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"X線トポグラフィによるSi結晶表面下の格子歪の解析","subitem_title_language":"ja"},{"subitem_title":"Analysis of Lattice Distortion under Si Crystal Surface by X-ray Topography","subitem_title_language":"en"}]},"item_type_id":"10002","owner":"5","path":["73","36","330","316"],"pubdate":{"attribute_name":"PubDate","attribute_value":"2007-06-28"},"publish_date":"2007-06-28","publish_status":"0","recid":"2440","relation_version_is_last":true,"title":["X線トポグラフィによるSi結晶表面下の格子歪の解析"],"weko_creator_id":"5","weko_shared_id":2},"updated":"2023-10-11T05:46:17.952617+00:00"}