@article{oai:miyazaki-u.repo.nii.ac.jp:00002440,
 author = {麻生, 貴之 and 福森, 太一郎 and 黒木, 正子 and Kuroki, Masako and 明石, 義人 and Akashi, Yoshito and 二神, 光次 and Futagami, Koji and Aso, Takayuki and Fukumori, Taichiro and 黒木, 正子 and Kuroki, Masako},
 journal = {宮崎大学工学部紀要, Memoirs of Faculty of Engineering, University of Miyazaki},
 month = {Aug},
 note = {Abstract 
The X-ray reflection topography under simultaneously stimulated total reflection is applied to 
analyze the lattice distortion just beneath the Si surface. 
Contrast change of the lattice distortion caused by the heat-treatment at the edge of the nitrogen ion 
implanted region silicon was evaluated contrast change from a systematic topographs taken at 
angles around the Bragg diffraction.The lattice distortion generated by annealing at the edge of the 
oxide film is also evaluated. 
The ratio of the contrast at the edge of implanted region over the averaged intensity of specimen 
is evaluated by transparented light intensity of films.And these ratios in a systematic topographs 
around the Bragg diffraction are plotted against the angles at which the topographs are taken. 
From this plot the difference in diffraction angle between average diffraction and edge contrast is 
obtained as 20" at the inner region and 15" at the outer region.},
 pages = {31--35},
 title = {X線トポグラフィによるSi結晶表面下の格子歪の解析},
 volume = {35},
 year = {2006},
 yomi = {アソウ, タカユキ and フクモリ, タイチロウ and クロキ, マサコ and アカシ, ヨシト and フタカミ, コウジ and クロキ, マサコ}
}