{"created":"2023-05-15T09:58:28.656461+00:00","id":2439,"links":{},"metadata":{"_buckets":{"deposit":"d325a6a3-5549-4981-897e-4ea3fc4657b5"},"_deposit":{"created_by":5,"id":"2439","owner":"5","owners":[5],"pid":{"revision_id":0,"type":"depid","value":"2439"},"status":"published"},"_oai":{"id":"oai:miyazaki-u.repo.nii.ac.jp:00002439","sets":["73","73:36","73:36:330","73:36:330:316"]},"author_link":["12264","7725","12265","17794","12259","12260","12263"],"item_10002_alternative_title_1":{"attribute_name":"その他（別言語等）のタイトル","attribute_value_mlt":[{"subitem_alternative_title":"テイエネルギー Nイオン チュウニュウ Si ノ アニール コウカ ト ヒョウメン コウシワイ ノ ヒョウカ","subitem_alternative_title_language":"ja-Kana"}]},"item_10002_biblio_info_7":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2006-08-30","bibliographicIssueDateType":"Issued"},"bibliographicPageEnd":"29","bibliographicPageStart":"25","bibliographicVolumeNumber":"35","bibliographic_titles":[{"bibliographic_title":"宮崎大学工学部紀要","bibliographic_titleLang":"ja"},{"bibliographic_title":"Memoirs of Faculty of Engineering, University of Miyazaki","bibliographic_titleLang":"en"}]}]},"item_10002_description_5":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"Czochralski-grown Si(100) wafers with a stripe of oxide film are implanted by N+ accelerated at 8keV and at 1.5keV to the dose of 1xl0(15)cm-2 . Lattice distortions produced by the implantation are observed by\nthe X-ray reflection topography under simultaneously stimulated total reflection. The contrast caused by the\nlattice expansions is observed in the implanted region of as-implanted specimen. This contrast is disappeared\nafter the annealing at 700°C and the other contrast is appeared at the edge of the implanted region. This new\ncontrast is identified to be caused by the increase in lattice spacing from the systematic topographs taken\naround the Bragg reflection. It is confirmed that the increase in lattice spacing can be recovered after the\n90min annealing at 700°C.","subitem_description_language":"en","subitem_description_type":"Abstract"}]},"item_10002_publisher_8":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"宮崎大学工学部","subitem_publisher_language":"ja"},{"subitem_publisher":"Faculty of Engineering, University of Miyazaki","subitem_publisher_language":"en"}]},"item_10002_source_id_11":{"attribute_name":"書誌レコードID","attribute_value_mlt":[{"subitem_source_identifier":"AA00732558","subitem_source_identifier_type":"NCID"}]},"item_10002_source_id_9":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"05404924","subitem_source_identifier_type":"ISSN"}]},"item_10002_version_type_20":{"attribute_name":"著者版フラグ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_970fb48d4fbd8a85","subitem_version_type":"VoR"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"長友, 秀樹","creatorNameLang":"ja"},{"creatorName":"ナガトモ, ヒデキ","creatorNameLang":"ja-Kana"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"福森, 太一郎"},{"creatorName":"フクモリ, タイチロウ","creatorNameLang":"ja-Kana"}],"nameIdentifiers":[{}]},{"creatorAffiliations":[{"affiliationNameIdentifiers":[{"affiliationNameIdentifier":"","affiliationNameIdentifierScheme":"ISNI","affiliationNameIdentifierURI":"http://www.isni.org/isni/"}],"affiliationNames":[{"affiliationName":"","affiliationNameLang":"ja"}]}],"creatorNames":[{"creatorName":"黒木, 正子","creatorNameLang":"ja"},{"creatorName":"クロキ, マサコ","creatorNameLang":"ja-Kana"},{"creatorName":"Kuroki, Masako","creatorNameLang":"en"}],"familyNames":[{},{},{}],"givenNames":[{},{},{}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"明石, 義人","creatorNameLang":"ja"},{"creatorName":"アカシ, ヨシト","creatorNameLang":"ja-Kana"},{"creatorName":"Akashi, Yoshito","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"二神, 光次","creatorNameLang":"ja"},{"creatorName":"フタカミ, コウジ","creatorNameLang":"ja-Kana"},{"creatorName":"Futagami, Koji","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Nagatomo, Hideki","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Fukumori, Taichiro","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorAffiliations":[{"affiliationNameIdentifiers":[{"affiliationNameIdentifier":"","affiliationNameIdentifierScheme":"ISNI","affiliationNameIdentifierURI":"http://www.isni.org/isni/"}],"affiliationNames":[{"affiliationName":"","affiliationNameLang":"ja"}]}],"creatorNames":[{"creatorName":"黒木, 正子","creatorNameLang":"ja"},{"creatorName":"クロキ, マサコ","creatorNameLang":"ja-Kana"},{"creatorName":"Kuroki, Masako","creatorNameLang":"en"}],"familyNames":[{},{},{}],"givenNames":[{},{},{}],"nameIdentifiers":[{}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2020-06-21"}],"displaytype":"detail","filename":"KJ00004439483.pdf","filesize":[{"value":"1.1 MB"}],"format":"application/pdf","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"KJ00004439483.pdf","url":"https://miyazaki-u.repo.nii.ac.jp/record/2439/files/KJ00004439483.pdf"},"version_id":"11d5fa37-4b49-4f4e-a51c-e990d91a6a9f"}]},"item_keyword":{"attribute_name":"キーワード","attribute_value_mlt":[{"subitem_subject":"Oxide film, Nitrogen, Implantation, X-ray topography, Lattice distortion, Annealing","subitem_subject_language":"en","subitem_subject_scheme":"Other"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"jpn"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"departmental bulletin paper","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"低エネルギーNイオン注入Siのアニール効果と表面格子歪の評価","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"低エネルギーNイオン注入Siのアニール効果と表面格子歪の評価","subitem_title_language":"ja"},{"subitem_title":"Surfaces Lattice Distortions in Silicon Implanted with Low-Energy Nitrogen Ions after Annealing","subitem_title_language":"en"}]},"item_type_id":"10002","owner":"5","path":["73","36","330","316"],"pubdate":{"attribute_name":"PubDate","attribute_value":"2007-06-28"},"publish_date":"2007-06-28","publish_status":"0","recid":"2439","relation_version_is_last":true,"title":["低エネルギーNイオン注入Siのアニール効果と表面格子歪の評価"],"weko_creator_id":"5","weko_shared_id":2},"updated":"2023-10-11T05:46:18.263403+00:00"}