@article{oai:miyazaki-u.repo.nii.ac.jp:00002439,
 author = {長友, 秀樹 and 福森, 太一郎 and 黒木, 正子 and Kuroki, Masako and 明石, 義人 and Akashi, Yoshito and 二神, 光次 and Futagami, Koji and Nagatomo, Hideki and Fukumori, Taichiro and 黒木, 正子 and Kuroki, Masako},
 journal = {宮崎大学工学部紀要, Memoirs of Faculty of Engineering, University of Miyazaki},
 month = {Aug},
 note = {Czochralski-grown Si(100) wafers with a stripe of oxide film are implanted by N+ accelerated at 8keV and at 1.5keV to the dose of 1xl0(15)cm-2 . Lattice distortions produced by the implantation are observed by
the X-ray reflection topography under simultaneously stimulated total reflection. The contrast caused by the
lattice expansions is observed in the implanted region of as-implanted specimen. This contrast is disappeared
after the annealing at 700°C and the other contrast is appeared at the edge of the implanted region. This new
contrast is identified to be caused by the increase in lattice spacing from the systematic topographs taken
around the Bragg reflection. It is confirmed that the increase in lattice spacing can be recovered after the
90min annealing at 700°C.},
 pages = {25--29},
 title = {低エネルギーNイオン注入Siのアニール効果と表面格子歪の評価},
 volume = {35},
 year = {2006},
 yomi = {ナガトモ, ヒデキ and フクモリ, タイチロウ and クロキ, マサコ and アカシ, ヨシト and フタカミ, コウジ and クロキ, マサコ}
}