{"created":"2023-05-15T09:58:26.876780+00:00","id":2405,"links":{},"metadata":{"_buckets":{"deposit":"c92d3843-6010-4af5-8609-bd1fe8b63f48"},"_deposit":{"created_by":5,"id":"2405","owner":"5","owners":[5],"pid":{"revision_id":0,"type":"depid","value":"2405"},"status":"published"},"_oai":{"id":"oai:miyazaki-u.repo.nii.ac.jp:00002405","sets":["73","73:36","73:36:330","73:36:330:315"]},"author_link":["12071","12061","12068","7290"],"item_10002_alternative_title_1":{"attribute_name":"その他（別言語等）のタイトル","attribute_value_mlt":[{"subitem_alternative_title":"シンクウ ジョウチャクホウ ニ ヨル AgGaSe2 ハクマク サクセイ ト ヒョウカ","subitem_alternative_title_language":"ja-Kana"}]},"item_10002_biblio_info_7":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2005-08","bibliographicIssueDateType":"Issued"},"bibliographicPageEnd":"126","bibliographicPageStart":"121","bibliographicVolumeNumber":"34","bibliographic_titles":[{"bibliographic_title":"宮崎大学工学部紀要","bibliographic_titleLang":"ja"},{"bibliographic_title":"Memoirs of Faculty of Engineering, University of Miyazaki","bibliographic_titleLang":"en"}]}]},"item_10002_description_5":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"Abstract \nWe prepared AgGaSe2 thin films by vacuum evaporation using binary materials of Ag2Se and \nGa2Se3. After the evaporation, these samples were annealed from 100 ℃ to 600 ℃ for 10 \nminute in Nitrogen atmosphere. These samples were evaluated by X-ray diffraction, surface \nmorphology, optical properties and electrical properties. The sample annealed at 600 ℃ \nshowed a single phase AgGaSe2. This grain size was larger than any other samples. \nThermoprobe analyze showed n-type conduction. It was assumed that as-deposition sample \nand the samples annealed at low temperature had many donor defects of Se vacancy. \nFurthermore carrier concentration decreases with increasing annealing temperature, because a \nnumber of accepter defect Ag vacancy increases with annealing temperature, as a result these \nshowed high resistivity.","subitem_description_language":"en","subitem_description_type":"Abstract"}]},"item_10002_publisher_8":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"宮崎大学工学部","subitem_publisher_language":"ja"},{"subitem_publisher":"Faculty of Engineering, University of Miyazaki","subitem_publisher_language":"en"}]},"item_10002_source_id_11":{"attribute_name":"書誌レコードID","attribute_value_mlt":[{"subitem_source_identifier":"AA00732558","subitem_source_identifier_type":"NCID"}]},"item_10002_source_id_9":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"05404924","subitem_source_identifier_type":"ISSN"}]},"item_10002_version_type_20":{"attribute_name":"著者版フラグ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_970fb48d4fbd8a85","subitem_version_type":"VoR"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorAffiliations":[{"affiliationNameIdentifiers":[{"affiliationNameIdentifier":"","affiliationNameIdentifierScheme":"ISNI","affiliationNameIdentifierURI":"http://www.isni.org/isni/"}],"affiliationNames":[{"affiliationName":"","affiliationNameLang":"ja"}]}],"creatorNames":[{"creatorName":"Matsuo, Hitoshi","creatorNameLang":"en"},{"creatorName":"松尾, 整","creatorNameLang":"ja"},{"creatorName":"マツオ, ヒトシ","creatorNameLang":"ja-Kana"}],"familyNames":[{},{},{}],"givenNames":[{},{},{}],"nameIdentifiers":[{}]},{"creatorAffiliations":[{"affiliationNameIdentifiers":[{"affiliationNameIdentifier":"","affiliationNameIdentifierScheme":"ISNI","affiliationNameIdentifierURI":"http://www.isni.org/isni/"}],"affiliationNames":[{"affiliationName":"","affiliationNameLang":"ja"}]}],"creatorNames":[{"creatorName":"掛野, 崇","creatorNameLang":"ja"},{"creatorName":"カケノ, タカシ","creatorNameLang":"ja-Kana"},{"creatorName":"Kakeno, Takashi","creatorNameLang":"en"}],"familyNames":[{},{},{}],"givenNames":[{},{},{}],"nameIdentifiers":[{}]},{"creatorAffiliations":[{"affiliationNameIdentifiers":[{"affiliationNameIdentifier":"","affiliationNameIdentifierScheme":"ISNI","affiliationNameIdentifierURI":"http://www.isni.org/isni/"}],"affiliationNames":[{"affiliationName":"","affiliationNameLang":"ja"}]}],"creatorNames":[{"creatorName":"Yoshino, Kenji","creatorNameLang":"en"},{"creatorName":"吉野, 賢二","creatorNameLang":"ja"},{"creatorName":"ヨシノ, ケンジ","creatorNameLang":"ja-Kana"}],"familyNames":[{},{},{}],"givenNames":[{},{},{}],"nameIdentifiers":[{},{}]},{"creatorAffiliations":[{"affiliationNameIdentifiers":[{"affiliationNameIdentifier":"","affiliationNameIdentifierScheme":"ISNI","affiliationNameIdentifierURI":"http://www.isni.org/isni/"}],"affiliationNames":[{"affiliationName":"","affiliationNameLang":"ja"}]}],"creatorNames":[{"creatorName":"Ikari, Tetsuo","creatorNameLang":"en"},{"creatorName":"碇, 哲雄","creatorNameLang":"ja"},{"creatorName":"イカリ, テツオ","creatorNameLang":"ja-Kana"}],"familyNames":[{},{},{}],"givenNames":[{},{},{}],"nameIdentifiers":[{},{}]},{"creatorAffiliations":[{"affiliationNameIdentifiers":[{"affiliationNameIdentifier":"","affiliationNameIdentifierScheme":"ISNI","affiliationNameIdentifierURI":"http://www.isni.org/isni/"}],"affiliationNames":[{"affiliationName":"","affiliationNameLang":"ja"}]}],"creatorNames":[{"creatorName":"Matsuo, Hitoshi","creatorNameLang":"en"},{"creatorName":"松尾, 整","creatorNameLang":"ja"},{"creatorName":"マツオ, ヒトシ","creatorNameLang":"ja-Kana"}],"familyNames":[{},{},{}],"givenNames":[{},{},{}],"nameIdentifiers":[{}]},{"creatorAffiliations":[{"affiliationNameIdentifiers":[{"affiliationNameIdentifier":"","affiliationNameIdentifierScheme":"ISNI","affiliationNameIdentifierURI":"http://www.isni.org/isni/"}],"affiliationNames":[{"affiliationName":"","affiliationNameLang":"ja"}]}],"creatorNames":[{"creatorName":"掛野, 崇","creatorNameLang":"ja"},{"creatorName":"カケノ, タカシ","creatorNameLang":"ja-Kana"},{"creatorName":"Kakeno, Takashi","creatorNameLang":"en"}],"familyNames":[{},{},{}],"givenNames":[{},{},{}],"nameIdentifiers":[{}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2020-06-21"}],"displaytype":"detail","filename":"KJ00003579368.pdf","filesize":[{"value":"993.8 kB"}],"format":"application/pdf","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"KJ00003579368.pdf","url":"https://miyazaki-u.repo.nii.ac.jp/record/2405/files/KJ00003579368.pdf"},"version_id":"e875db7c-ab05-48c1-9962-29407e80e519"}]},"item_keyword":{"attribute_name":"キーワード","attribute_value_mlt":[{"subitem_subject":"Chalcopyrite, AgGaSe2, thin film, evaporation","subitem_subject_language":"en","subitem_subject_scheme":"Other"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"jpn"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"departmental bulletin paper","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"真空蒸着法によるAgGaSe2薄膜作成と評価","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"真空蒸着法によるAgGaSe2薄膜作成と評価","subitem_title_language":"ja"},{"subitem_title":"Preparation and investigation of AgGaSe2 thin films by evaporation method","subitem_title_language":"en"}]},"item_type_id":"10002","owner":"5","path":["73","36","330","315"],"pubdate":{"attribute_name":"PubDate","attribute_value":"2007-06-28"},"publish_date":"2007-06-28","publish_status":"0","recid":"2405","relation_version_is_last":true,"title":["真空蒸着法によるAgGaSe2薄膜作成と評価"],"weko_creator_id":"5","weko_shared_id":2},"updated":"2023-10-23T01:38:35.247053+00:00"}