@article{oai:miyazaki-u.repo.nii.ac.jp:00002405,
 author = {Matsuo, Hitoshi and 松尾, 整 and 掛野, 崇 and Kakeno, Takashi and Yoshino, Kenji and 吉野, 賢二 and Ikari, Tetsuo and 碇, 哲雄 and Matsuo, Hitoshi and 松尾, 整 and 掛野, 崇 and Kakeno, Takashi},
 journal = {宮崎大学工学部紀要, Memoirs of Faculty of Engineering, University of Miyazaki},
 month = {Aug},
 note = {Abstract 
We prepared AgGaSe2 thin films by vacuum evaporation using binary materials of Ag2Se and 
Ga2Se3. After the evaporation, these samples were annealed from 100 ℃ to 600 ℃ for 10 
minute in Nitrogen atmosphere. These samples were evaluated by X-ray diffraction, surface 
morphology, optical properties and electrical properties. The sample annealed at 600 ℃ 
showed a single phase AgGaSe2. This grain size was larger than any other samples. 
Thermoprobe analyze showed n-type conduction. It was assumed that as-deposition sample 
and the samples annealed at low temperature had many donor defects of Se vacancy. 
Furthermore carrier concentration decreases with increasing annealing temperature, because a 
number of accepter defect Ag vacancy increases with annealing temperature, as a result these 
showed high resistivity.},
 pages = {121--126},
 title = {真空蒸着法によるAgGaSe2薄膜作成と評価},
 volume = {34},
 year = {2005},
 yomi = {マツオ, ヒトシ and カケノ, タカシ and ヨシノ, ケンジ and イカリ, テツオ and マツオ, ヒトシ and カケノ, タカシ}
}