{"created":"2023-05-15T09:58:26.811170+00:00","id":2404,"links":{},"metadata":{"_buckets":{"deposit":"8d9adb2f-4a63-4f9a-8726-1848a1a174e3"},"_deposit":{"created_by":5,"id":"2404","owner":"5","owners":[5],"pid":{"revision_id":0,"type":"depid","value":"2404"},"status":"published"},"_oai":{"id":"oai:miyazaki-u.repo.nii.ac.jp:00002404","sets":["73","73:36","73:36:330","73:36:330:315"]},"author_link":["7290","12063","12060","12061","12059","12064"],"item_10002_alternative_title_1":{"attribute_name":"その他（別言語等）のタイトル","attribute_value_mlt":[{"subitem_alternative_title":"スパッタリングホウ ニ ヨル ZnOケイ ハクマク ノ サクセイ オヨビ サンソ ブンアツ イゾンセイ","subitem_alternative_title_language":"ja-Kana"}]},"item_10002_biblio_info_7":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2005-08","bibliographicIssueDateType":"Issued"},"bibliographicPageEnd":"120","bibliographicPageStart":"115","bibliographicVolumeNumber":"34","bibliographic_titles":[{"bibliographic_title":"宮崎大学工学部紀要","bibliographic_titleLang":"ja"},{"bibliographic_title":"Memoirs of Faculty of Engineering, University of Miyazaki","bibliographic_titleLang":"en"}]}]},"item_10002_description_5":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"Abstract \nZinc oxide (ZnO) thin film has been a promising material as well as the indium tin oxide and tin \noxide for the front electrode in a variety of opto-electronic devices. In this work, DC sputtering was \ncarried out to obtain high conductive and transparent Ga (5 wt%) -doped ZnO (GZO) films under \ndifferent conditions (O2 partial pressures: Po2). Undoped ZnO film was also grown by the DC \nsputtering as a reference. In undoped ZnO films, a carrier concentration decreased and a resistivity \nincreased with increasing the Po2. This result was due to the decreasing donor type defects such as \noxygen vacancy (Vo) and/or interstitial Zn (Zni). However, a carrier concentration of the GZO films \nwas almost constant with increasing the Po2, It was assumed that a predominant career of the GZO\nwas Ga substituted in the Zn site (Gazn) or interstitial Ga (Gai), which were expected from a higher \ncamer concentration of 10(20乗) cm(-3乗) in the GZO film.","subitem_description_language":"en","subitem_description_type":"Abstract"}]},"item_10002_publisher_8":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"宮崎大学工学部","subitem_publisher_language":"ja"},{"subitem_publisher":"Faculty of Engineering, University of Miyazaki","subitem_publisher_language":"en"}]},"item_10002_source_id_11":{"attribute_name":"書誌レコードID","attribute_value_mlt":[{"subitem_source_identifier":"AA00732558","subitem_source_identifier_type":"NCID"}]},"item_10002_source_id_9":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"05404924","subitem_source_identifier_type":"ISSN"}]},"item_10002_version_type_20":{"attribute_name":"著者版フラグ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_970fb48d4fbd8a85","subitem_version_type":"VoR"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"福嶋, 貴志","creatorNameLang":"ja"},{"creatorName":"フクシマ, タカシ","creatorNameLang":"ja-Kana"}],"nameIdentifiers":[{"nameIdentifier":"12059","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"大牟田, 真吾"},{"creatorName":"オオムタ, シンゴ","creatorNameLang":"ja-Kana"}],"nameIdentifiers":[{"nameIdentifier":"12060","nameIdentifierScheme":"WEKO"}]},{"creatorAffiliations":[{"affiliationNameIdentifiers":[{"affiliationNameIdentifier":"0000000106573887","affiliationNameIdentifierScheme":"ISNI","affiliationNameIdentifierURI":"https://isni.org/isni/0000000106573887"}],"affiliationNames":[{"affiliationName":"宮崎大学","affiliationNameLang":"ja"},{"affiliationName":"University of Miyazaki","affiliationNameLang":"en"}]}],"creatorNames":[{"creatorName":"吉野, 賢二","creatorNameLang":"ja"},{"creatorName":"ヨシノ, ケンジ","creatorNameLang":"ja-Kana"},{"creatorName":"Yoshino, Kenji","creatorNameLang":"en"}],"familyNames":[{"familyName":"吉野","familyNameLang":"ja"},{"familyName":"ヨシノ","familyNameLang":"ja-Kana"},{"familyName":"Yoshino","familyNameLang":"en"}],"givenNames":[{"givenName":"賢二","givenNameLang":"ja"},{"givenName":"ケンジ","givenNameLang":"ja-Kana"},{"givenName":"Kenji","givenNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"12061","nameIdentifierScheme":"WEKO"},{"nameIdentifier":"80284826","nameIdentifierScheme":"e-Rad_Researcher","nameIdentifierURI":"https://kaken.nii.ac.jp/ja/search/?qm=80284826"}]},{"creatorAffiliations":[{"affiliationNameIdentifiers":[{"affiliationNameIdentifier":"0000000106573887","affiliationNameIdentifierScheme":"ISNI","affiliationNameIdentifierURI":"https://isni.org/isni/0000000106573887"}],"affiliationNames":[{"affiliationName":"宮崎大学","affiliationNameLang":"ja"},{"affiliationName":"University of Miyazaki","affiliationNameLang":"en"}]}],"creatorNames":[{"creatorName":"碇, 哲雄","creatorNameLang":"ja"},{"creatorName":"イカリ, テツオ","creatorNameLang":"ja-Kana"},{"creatorName":"Ikari, Tetsuo","creatorNameLang":"en"}],"familyNames":[{"familyName":"碇","familyNameLang":"ja"},{"familyName":"イカリ","familyNameLang":"ja-Kana"},{"familyName":"Ikari","familyNameLang":"en"}],"givenNames":[{"givenName":"哲雄","givenNameLang":"ja"},{"givenName":"テツオ","givenNameLang":"ja-Kana"},{"givenName":"Tetsuo","givenNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"7290","nameIdentifierScheme":"WEKO"},{"nameIdentifier":"70113214","nameIdentifierScheme":"e-Rad_Researcher","nameIdentifierURI":"https://kaken.nii.ac.jp/ja/search/?qm=70113214"}]},{"creatorNames":[{"creatorName":"Fukushima, Takashi","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"12063","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Ohmuta, Shingo","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"12064","nameIdentifierScheme":"WEKO"}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2020-06-21"}],"displaytype":"detail","filename":"KJ00003579367.pdf","filesize":[{"value":"1.2 MB"}],"format":"application/pdf","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"KJ00003579367.pdf","url":"https://miyazaki-u.repo.nii.ac.jp/record/2404/files/KJ00003579367.pdf"},"version_id":"e3196ae7-ab70-4912-9c45-b5838ed03ccf"}]},"item_keyword":{"attribute_name":"キーワード","attribute_value_mlt":[{"subitem_subject":"ZnO, GZO, O2 partial pressures, Sputtering","subitem_subject_language":"en","subitem_subject_scheme":"Other"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"jpn"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"departmental bulletin paper","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"スパッタリング法によるZnO系薄膜の作成および酸素分圧依存性","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"スパッタリング法によるZnO系薄膜の作成および酸素分圧依存性","subitem_title_language":"ja"},{"subitem_title":"Dependence of Oxygen Pressures of ZnO Thin Films Grown by Sputtering Method","subitem_title_language":"en"}]},"item_type_id":"10002","owner":"5","path":["73","36","330","315"],"pubdate":{"attribute_name":"PubDate","attribute_value":"2007-06-28"},"publish_date":"2007-06-28","publish_status":"0","recid":"2404","relation_version_is_last":true,"title":["スパッタリング法によるZnO系薄膜の作成および酸素分圧依存性"],"weko_creator_id":"5","weko_shared_id":2},"updated":"2025-01-09T06:00:25.470936+00:00"}