@article{oai:miyazaki-u.repo.nii.ac.jp:00002403,
 author = {有馬, 孝之 and 境, 貴洋 and Sakai, Takahiro and 生田, 譲 and Ikuta, Jo and Ikari, Tetsuo and 碇, 哲雄 and Maeda, Koji and 前田, 幸治 and Maeda, Kouji and Tonchev, D and Munzar, M. and Kasap, S. O. and Arima, Takayuki and 生田, 譲 and Ikuta, Jo and Tonchev, D and Munzar, M.},
 journal = {宮崎大学工学部紀要, Memoirs of Faculty of Engineering, University of Miyazaki},
 month = {Aug},
 note = {Abstract 
Erbium doped chalcogenide glasses (((Ge30(Se+S)70)100-xGax)100-y:Ery (x=3, 6, 9 and 12, y=0.3～3.0 
at.%) were prepared by melt quenching methods. We observed the absorption coefficient of Er3+ ions 
at 976nm and 1540nm, and the intensity of 1550 nm band photoluminescence (PL), which was excited 
by a 976nm laser. Raman scattering spectra were also observed. These results were obtained as a 
function of Ga and Er contents. The absorption spectra shapes of Er3+ ions didn't change with Ga and 
Er contents. The absorption coefficients proportionally increased with increasing Er contents, and 
were saturated at the ratio of atomic % in which Er/Ga ratio equal to 1/5 except for x=12 samples. We 
found that the PL intensity increased with increasing Er contents, then reached a maximum at about 
the same atomic ratio. In the Raman spectra, the structure of glasses changed with Ga contents. These 
results imply that Er3+ ions and Ga atoms form domains which included high ionicity bonds with Er3+ 
in the matrix. The structure would be influenced the solubility of Er3+ ions in the host glass.},
 pages = {109--114},
 title = {Er添加カルコゲナイドガラスのフォトルミネッセンス法による評価},
 volume = {34},
 year = {2005},
 yomi = {アリマ, タカユキ and サカイ, タカヒロ and イクタ, ジョウ and イカリ, テツオ and マエダ, コウジ and イクタ, ジョウ}
}