{"created":"2023-05-15T09:58:25.826325+00:00","id":2389,"links":{},"metadata":{"_buckets":{"deposit":"33cb0877-b333-4b5d-95b2-78f641913827"},"_deposit":{"created_by":5,"id":"2389","owner":"5","owners":[5],"pid":{"revision_id":0,"type":"depid","value":"2389"},"status":"published"},"_oai":{"id":"oai:miyazaki-u.repo.nii.ac.jp:00002389","sets":["73","73:36","73:36:330","73:36:330:315"]},"author_link":["11920","11924","11921","28621"],"item_10002_alternative_title_1":{"attribute_name":"その他（別言語等）のタイトル","attribute_value_mlt":[{"subitem_alternative_title":"ゲンシソウ エピタキシー ニ ヨル InAs/GaAs ト GaP/GaAs ヘテロ コウゾウ ワイチョウコウシ ノ セイチョウ キコウ ノ ケンキュウ","subitem_alternative_title_language":"ja-Kana"}]},"item_10002_biblio_info_7":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2005-08","bibliographicIssueDateType":"Issued"},"bibliographicPageEnd":"36","bibliographicPageStart":"31","bibliographicVolumeNumber":"34","bibliographic_titles":[{"bibliographic_title":"宮崎大学工学部紀要","bibliographic_titleLang":"ja"},{"bibliographic_title":"Memoirs of Faculty of Engineering, University of Miyazaki","bibliographic_titleLang":"en"}]}]},"item_10002_description_5":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"Abstract \nA self-limiting mechanism in atomic layer epitaxy (ALE) has been investigated for the \nheterostructures and superlattices of III - V compounds. InAs/InAs(OO1), InAs/GaAs(OO1), \nGaAs/InAs(OO1), InxGa1-xAs/GaAs(OOl), GaP/GaP(OO1), and GaP/GaAs(OO1), (InAs)m(GaAs)n/GaAs(OO1) \nwere grown by pulse-jet-epitaxy with trimethylgallium, trimethylindium, trisdimethylaminoarsine, \ntrisdimethylaminophosophine, arsine and phosphine as source materials. The self-limiting \nmechanism was largely affected by lattice mismatch between epitaxial layer and the substrate and \nby an atomic level suface morphology. The incorporation of misfit dislocation at the \nheterointerface played an important role in the self-1limiting mechanism. The strained-layered \nsuperlattice of (InAs)m(GaAs)n enabled us to grow InGaAS Iayer with an effectively high indium \ncomposition.","subitem_description_language":"en","subitem_description_type":"Abstract"}]},"item_10002_publisher_8":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"宮崎大学工学部","subitem_publisher_language":"ja"},{"subitem_publisher":"Faculty of Engineering, University of Miyazaki","subitem_publisher_language":"en"}]},"item_10002_source_id_11":{"attribute_name":"書誌レコードID","attribute_value_mlt":[{"subitem_source_identifier":"AA00732558","subitem_source_identifier_type":"NCID"}]},"item_10002_source_id_9":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"05404924","subitem_source_identifier_type":"ISSN"}]},"item_10002_version_type_20":{"attribute_name":"著者版フラグ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_970fb48d4fbd8a85","subitem_version_type":"VoR"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorAffiliations":[{"affiliationNameIdentifiers":[{"affiliationNameIdentifier":"","affiliationNameIdentifierScheme":"ISNI","affiliationNameIdentifierURI":"http://www.isni.org/isni/"}],"affiliationNames":[{"affiliationName":"","affiliationNameLang":"ja"}]}],"creatorNames":[{"creatorName":"原口, 智宏","creatorNameLang":"ja"},{"creatorName":"ハラグチ, トモヒロ","creatorNameLang":"ja-Kana"},{"creatorName":"Haraguchi, Tomohiro","creatorNameLang":"en"}],"familyNames":[{},{},{}],"givenNames":[{},{},{}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"尾関, 雅志"},{"creatorName":"オゼキ, マサシ","creatorNameLang":"ja-Kana"},{"creatorName":"Ozeki, Masashi","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"武内, 健","creatorNameLang":"ja"},{"creatorName":"タケウチ, タケシ","creatorNameLang":"ja-Kana"}],"nameIdentifiers":[{}]},{"creatorAffiliations":[{"affiliationNameIdentifiers":[{"affiliationNameIdentifier":"","affiliationNameIdentifierScheme":"ISNI","affiliationNameIdentifierURI":"http://www.isni.org/isni/"}],"affiliationNames":[{"affiliationName":"","affiliationNameLang":"ja"}]}],"creatorNames":[{"creatorName":"原口, 智宏","creatorNameLang":"ja"},{"creatorName":"ハラグチ, トモヒロ","creatorNameLang":"ja-Kana"},{"creatorName":"Haraguchi, Tomohiro","creatorNameLang":"en"}],"familyNames":[{},{},{}],"givenNames":[{},{},{}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Takeuchi, Takeshi","creatorNameLang":"en"}],"nameIdentifiers":[{}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2020-06-21"}],"displaytype":"detail","filename":"KJ00003579353.pdf","filesize":[{"value":"622.8 kB"}],"format":"application/pdf","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"KJ00003579353.pdf","url":"https://miyazaki-u.repo.nii.ac.jp/record/2389/files/KJ00003579353.pdf"},"version_id":"b748d433-e306-4f88-bfe1-bd1ec1154f55"}]},"item_keyword":{"attribute_name":"キーワード","attribute_value_mlt":[{"subitem_subject":"Growth method, Atomic layer epitaxy, Semiconducting, III-V materials","subitem_subject_language":"en","subitem_subject_scheme":"Other"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"jpn"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"departmental bulletin paper","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"原子層エピタキシーによるInAs/GaAsとGaP/GaAsへテロ構造、歪超格子の成長機構の研究","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"原子層エピタキシーによるInAs/GaAsとGaP/GaAsへテロ構造、歪超格子の成長機構の研究","subitem_title_language":"ja"},{"subitem_title":"A comparative study of the growth mechanism of InAs/GaAs and GaP/GaAs heterostructures and strained layered superlattices by atomic layer epitaxy","subitem_title_language":"en"}]},"item_type_id":"10002","owner":"5","path":["73","36","330","315"],"pubdate":{"attribute_name":"PubDate","attribute_value":"2007-06-28"},"publish_date":"2007-06-28","publish_status":"0","recid":"2389","relation_version_is_last":true,"title":["原子層エピタキシーによるInAs/GaAsとGaP/GaAsへテロ構造、歪超格子の成長機構の研究"],"weko_creator_id":"5","weko_shared_id":2},"updated":"2023-10-11T02:23:52.277569+00:00"}