@article{oai:miyazaki-u.repo.nii.ac.jp:00002389,
 author = {原口, 智宏 and Haraguchi, Tomohiro and 尾関, 雅志 and Ozeki, Masashi and 武内, 健 and 原口, 智宏 and Haraguchi, Tomohiro and Takeuchi, Takeshi},
 journal = {宮崎大学工学部紀要, Memoirs of Faculty of Engineering, University of Miyazaki},
 month = {Aug},
 note = {Abstract 
A self-limiting mechanism in atomic layer epitaxy (ALE) has been investigated for the 
heterostructures and superlattices of III - V compounds. InAs/InAs(OO1), InAs/GaAs(OO1), 
GaAs/InAs(OO1), InxGa1-xAs/GaAs(OOl), GaP/GaP(OO1), and GaP/GaAs(OO1), (InAs)m(GaAs)n/GaAs(OO1) 
were grown by pulse-jet-epitaxy with trimethylgallium, trimethylindium, trisdimethylaminoarsine, 
trisdimethylaminophosophine, arsine and phosphine as source materials. The self-limiting 
mechanism was largely affected by lattice mismatch between epitaxial layer and the substrate and 
by an atomic level suface morphology. The incorporation of misfit dislocation at the 
heterointerface played an important role in the self-1limiting mechanism. The strained-layered 
superlattice of (InAs)m(GaAs)n enabled us to grow InGaAS Iayer with an effectively high indium 
composition.},
 pages = {31--36},
 title = {原子層エピタキシーによるInAs/GaAsとGaP/GaAsへテロ構造、歪超格子の成長機構の研究},
 volume = {34},
 year = {2005},
 yomi = {ハラグチ, トモヒロ and オゼキ, マサシ and タケウチ, タケシ and ハラグチ, トモヒロ}
}