| アイテムタイプ |
学術雑誌論文 / Journal Article(1) |
| 公開日 |
2026-01-07 |
| タイトル |
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タイトル |
Enhanced High Laser Irradiation Tolerance in Single-Junction InGaAsP Laser Power Converters With 42% Conversion Efficiency |
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言語 |
en |
| 言語 |
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言語 |
eng |
| キーワード |
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言語 |
en |
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キーワード |
Electroplating |
| キーワード |
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言語 |
en |
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キーワード |
indium gallium arsenide phosphide |
| キーワード |
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言語 |
en |
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キーワード |
laser power converter (LPC) |
| キーワード |
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言語 |
en |
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キーワード |
optical wireless power transmission (OWPT) |
| キーワード |
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言語 |
en |
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キーワード |
single junction |
| 資源タイプ |
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資源タイプ |
journal article |
| アクセス権 |
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アクセス権 |
open access |
| 著者 |
Aonuki, Sho
| en |
Aonuki, Sho（Personal）
Nippon Telegraph and Telephone Corporation
|
Search repository
Oshimo, Takaya
Tabata, Kotona
Yamada, Takeru
Suzuki, Junichi
Aoyama, Reo
Uchida, Shiro
Akahane, Kouichi
| en |
Akahane, Kouichi（Personal）
National Institute of Information and Communications Technology
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Search repository
Ochiai, Natsuha
| en |
Ochiai, Natsuha（Personal）
Nippon Telegraph and Telephone Corporation
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Search repository
Suzuki, Yukiko
| en |
Suzuki, Yukiko（Personal）
Nippon Telegraph and Telephone Corporation
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Search repository
Kashiwakura, Kazuto
| en |
Kashiwakura, Kazuto（Personal）
Nippon Telegraph and Telephone Corporation
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Search repository
西岡, 賢祐
WEKO
13733
e-Rad_Researcher
00377441
| ja |
西岡, 賢祐
宮崎大学
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| ja-Kana |
ニシオカ, ケンスケ
|
| en |
Nishioka, Kensuke
University of Miyazaki
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Search repository
荒井, 昌和
WEKO
30403
e-Rad_Researcher
90522003
| ja |
荒井, 昌和
宮崎大学
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| ja-Kana |
アライ, マサカズ
|
| en |
Arai, Masakazu
University of Miyazaki
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Search repository
Toriumi, Yohei
| en |
Toriumi, Yohei（Personal）
Nippon Telegraph and Telephone Corporation
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Search repository
Takahashi, Madoka
| en |
Takahashi, Madoka（Personal）
Nippon Telegraph and Telephone Corporation
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Search repository
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| 抄録 |
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内容記述タイプ |
Abstract |
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内容記述 |
We fabricated a single-junction InGaAsP laser power converter (LPC) with an active area of 1 cm2 for 1064 nm laser applications using metalorganic chemical vapor deposition. To suppress series resistance ( RS) losses under high-power laser irradiation, an 11- μ m-thick Au/Ag surface electrode with a width of 23 μ m and a shadowing loss of 7% was formed by electroplating. The device exhibited the internal quantum efficiency (IQE) of 0.909 at 1065 nm and a temperature coefficient of −0.22% rel.⋅ K −1 . The fill factor (FF) exhibited a maximum of 76.9% at 3.0 W ⋅ cm–2, attributed to the thick surface electrode. The RS was calculated to be 1.3×10−2 Ω⋅ cm2 by fitting the JV curves under 4.0 W ⋅ cm–2 irradiation using a one-diode model. This result corresponds to an approximately 19% reduction relative to that of the previously reported InGaAsP LPC with a 3.2- μ m-thick Au/Ag electrode and an active area of 0.06 mm2. A conversion efficiency ( η) of 42.0% and an FF of 76.7% were achieved in the single-junction InGaAsP LPC with an active area of 1 cm2 under 4.0 W ⋅ cm–2. To the best of our knowledge, these represent the highest reported values for any single-junction LPC designed for 1064 nm lasers with an active area ≥1 cm2. Power loss analysis revealed that the RS caused FF and η losses of 3.9%abs. and 2.1%abs.at 4.0 W ⋅ cm–2, respectively. The obtained FF to that in the theoretical limit ratio implied that the thick surface electrode enhanced the high laser irradiation resistance. This technique can be applied to any other LPCs to mitigate the FF degradation under high laser irradiation. |
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言語 |
en |
| 書誌情報 |
en : IEEE Transactions on Electron Devices
巻 72,
p. 6829-6835,
発行日 2025-10-31
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| 出版者 |
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出版者 |
Institute of Electrical and Electronics Engineers |
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言語 |
en |
| ISSN |
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収録物識別子タイプ |
EISSN |
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収録物識別子 |
15579646 |
| ISSN |
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収録物識別子タイプ |
ISSN |
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収録物識別子 |
00189383 |
| DOI |
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関連タイプ |
isVersionOf |
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識別子タイプ |
DOI |
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関連識別子 |
https://doi.org/10.1109/TED.2025.3619923 |
| 権利 |
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権利情報 |
© 2025 The Authors. |
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言語 |
en |
| 著者版フラグ |
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出版タイプ |
VoR |
Fulltext (772 KB)
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