| アイテムタイプ |
紀要論文 / Departmental Bulletin Paper(1) |
| 公開日 |
2025-12-03 |
| タイトル |
|
|
タイトル |
電子線照射とその後の回復熱処理によりSiに形成された欠陥準位のPL解析 |
|
言語 |
ja |
| タイトル |
|
|
タイトル |
Photoluminescence analysis of deep defect levels induced by electron-beam irradiation and subsequent thermal annealing in n-Si substrate |
|
言語 |
en |
| 言語 |
|
|
言語 |
jpn |
| キーワード |
|
|
言語 |
en |
|
主題Scheme |
Other |
|
主題 |
Si |
| キーワード |
|
|
言語 |
en |
|
主題Scheme |
Other |
|
主題 |
Power devices |
| キーワード |
|
|
言語 |
en |
|
主題Scheme |
Other |
|
主題 |
Electron irradiation |
| キーワード |
|
|
言語 |
en |
|
主題Scheme |
Other |
|
主題 |
Defects |
| キーワード |
|
|
言語 |
en |
|
主題Scheme |
Other |
|
主題 |
Anneal |
| キーワード |
|
|
言語 |
en |
|
主題Scheme |
Other |
|
主題 |
Photoluminescence |
| 資源タイプ |
|
|
資源タイプ識別子 |
http://purl.org/coar/resource_type/c_6501 |
|
資源タイプ |
departmental bulletin paper |
| ID登録 |
|
|
ID登録 |
10.34481/0002001943 |
|
ID登録タイプ |
JaLC |
| アクセス権 |
|
|
アクセス権 |
open access |
| 著者 |
原口, 佑斗
佐々木, 駿
三次, 伯知
原田, 知季
碇, 哲雄
福山, 敦彦
WEKO
7289
e-Rad_Researcher
10264368
| ja |
福山, 敦彦
宮崎大学
|
| ja-Kana |
フクヤマ, アツヒコ
|
| en |
Fukuyama, Atsuhiko
University of Miyazaki
|
Search repository
|
| 抄録 |
|
|
内容記述タイプ |
Abstract |
|
内容記述 |
Defects induced by electron-beam irradiation and subsequent thermal annealing are used to improve the switching performance of silicon power devices. However, the properties of the defects formed by the irradiation have never been fully clarified. Furthermore, it is believed that defects originating from interstitial carbon generated by irradiation reduce the carrier lifetime, but its carrier transition mechanism is still under discussion. In this study, the relationship between defects induced in n-Si substrates after electron-beam irradiation and subsequent thermal annealing and the interstitial carbon was investigated using photoluminescence method. Emission from Si can be detected with high sensitivity by cooling the sample chamber down to 4.3 K. A new peak was detected at 0.761 eV, which is even lower energy than the P-line (0.767 eV), the sample annealed at 550°C and 600°C for 20 minutes after electron irradiation. We defined this peak as S-line. From the measurement results of samples with different carbon concentrations, it was found that the S-line is correlated with the carbon concentration. In the C-line (0.789 eV), P-line, and S-line observed near energy, they appeared with increasing annealing temperature in the order of higher energy. This trend predicts that the S-line has the same origin as the C-line and P-line. Carbon and oxygen complexes are involved in the C-line and P-line. The newly discovered S-lines in the heat treatments at 550°C and 600°C after electron irradiation may be attributed to carbon and oxygen complex. |
|
言語 |
en |
| 書誌情報 |
ja : 宮崎大学工学部紀要
en : Memoirs of Faculty of Engineering, University of Miyazaki
巻 54,
p. 59-63,
発行日 2025-10-29
|
| 出版者 |
|
|
出版者 |
宮崎大学工学部 |
|
言語 |
ja |
| 出版者 |
|
|
出版者 |
Faculty of Engineering, University of Miyazaki |
|
言語 |
en |
| ISSN |
|
|
収録物識別子タイプ |
PISSN |
|
収録物識別子 |
05404924 |
| 著者版フラグ |
|
|
出版タイプ |
VoR |
|
出版タイプResource |
http://purl.org/coar/version/c_970fb48d4fbd8a85 |
本文 (1.5 MB)
