WEKO3
アイテム
Excitation intensity and temperature dependence of photoluminescence in mid-infrared region for lattice-matched InAs/GaAsSb superlattice grown by metalorganic vapor-phase epitaxy
http://hdl.handle.net/10458/0002001211
http://hdl.handle.net/10458/0002001211658bfb0a-ad4b-464b-9a0d-0471dd9ecbeb
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This version of the article has been accepted for publication, after peer review (when applicable) and is subject to Springer Nature’s AM terms of use, but is not the Version of Record and does not reflect post-acceptance improvements, or any corrections. The Version of Record is available online at: http://dx.doi.org/10.1007/s10854-024-14142-7
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| アイテムタイプ | 学術雑誌論文 / Journal Article(1) | |||||||||||||||||||
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| 公開日 | 2025-04-28 | |||||||||||||||||||
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| タイトル | Excitation intensity and temperature dependence of photoluminescence in mid-infrared region for lattice-matched InAs/GaAsSb superlattice grown by metalorganic vapor-phase epitaxy | |||||||||||||||||||
| 言語 | en | |||||||||||||||||||
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| 言語 | eng | |||||||||||||||||||
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| 資源タイプ | journal article | |||||||||||||||||||
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| アクセス権 | open access | |||||||||||||||||||
| 著者 |
前田, 幸治
× 前田, 幸治
WEKO
12047
× Fujisawa, Takeshi
× 荒井, 昌和
WEKO
30403
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| 内容記述タイプ | Abstract | |||||||||||||||||||
| 内容記述 | Lattice-matched InAs/GaAs0.08Sb0.92 superlattices were grown on InAs substrates via metalorganic vapor-phase epitaxy, and the excitation intensity dependence of photoluminescence (PL) was measured from 20 to 300 K. The observed spectra were compared with the calculated spontaneous emission transitions. At 20 K, the changes in the calculated and measured spectral shapes with the carrier density in the wells closely concur. The blue shift of the emission peak, as the excitation intensity increased, was due to emission from a higher-order band. We determined the specific wavelengths at which the luminescence intensity increased rapidly at certain excitation intensities. These results broaden the spectral range. At 300 K, the PL spectrum was obtained only under strong excitation. Furthermore, higher-order transitions were also dominant in this case. | |||||||||||||||||||
| 言語 | en | |||||||||||||||||||
| bibliographic_information |
en : Journal of Materials Science: Materials in Electronics 巻 36, p. 122, 発行日 2025-01-10 |
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| 出版者 | Springer Nature | |||||||||||||||||||
| 言語 | en | |||||||||||||||||||
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| 収録物識別子 | 0957-4522 | |||||||||||||||||||
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| 収録物識別子タイプ | EISSN | |||||||||||||||||||
| 収録物識別子 | 1573-482X | |||||||||||||||||||
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| 関連タイプ | isVersionOf | |||||||||||||||||||
| 識別子タイプ | DOI | |||||||||||||||||||
| 関連識別子 | https://doi.org/10.1007/s10854-024-14142-7 | |||||||||||||||||||
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| 出版タイプ | AM | |||||||||||||||||||