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  1. 工学部
  1. 工学部
  2. 学術雑誌掲載論文 (工学部)

Excitation intensity and temperature dependence of photoluminescence in mid-infrared region for lattice-matched InAs/GaAsSb superlattice grown by metalorganic vapor-phase epitaxy

http://hdl.handle.net/10458/0002001211
http://hdl.handle.net/10458/0002001211
658bfb0a-ad4b-464b-9a0d-0471dd9ecbeb
名前 / ファイル ライセンス アクション
JMSv3.2.pdf AuthorManuscript (853 KB)
This version of the article has been accepted for publication, after peer review (when applicable) and is subject to Springer Nature’s AM terms of use, but is not the Version of Record and does not reflect post-acceptance improvements, or any corrections. The Version of Record is available online at: http://dx.doi.org/10.1007/s10854-024-14142-7
アイテムタイプ 学術雑誌論文 / Journal Article(1)
公開日 2025-04-28
タイトル
タイトル Excitation intensity and temperature dependence of photoluminescence in mid-infrared region for lattice-matched InAs/GaAsSb superlattice grown by metalorganic vapor-phase epitaxy
言語 en
言語
言語 eng
資源タイプ
資源タイプ journal article
アクセス権
アクセス権 open access
著者 前田, 幸治

× 前田, 幸治

WEKO 12047
e-Rad_Researcher 50219268

ja 前田, 幸治
宮崎大学

ja-Kana マエダ, コウジ

en Maeda, Koji
University of Miyazaki

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Fujisawa, Takeshi

× Fujisawa, Takeshi

en Fujisawa, Takeshi
Hokkaido University

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荒井, 昌和

× 荒井, 昌和

WEKO 30403
e-Rad_Researcher 90522003

ja 荒井, 昌和
宮崎大学

ja-Kana アライ, マサカズ

en Arai, Masakazu
University of Miyazaki

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内容記述タイプ Abstract
内容記述 Lattice-matched InAs/GaAs0.08Sb0.92 superlattices were grown on InAs substrates via metalorganic vapor-phase epitaxy, and the excitation intensity dependence of photoluminescence (PL) was measured from 20 to 300 K. The observed spectra were compared with the calculated spontaneous emission transitions. At 20 K, the changes in the calculated and measured spectral shapes with the carrier density in the wells closely concur. The blue shift of the emission peak, as the excitation intensity increased, was due to emission from a higher-order band. We determined the specific wavelengths at which the luminescence intensity increased rapidly at certain excitation intensities. These results broaden the spectral range. At 300 K, the PL spectrum was obtained only under strong excitation. Furthermore, higher-order transitions were also dominant in this case.
言語 en
bibliographic_information en : Journal of Materials Science: Materials in Electronics

巻 36, p. 122, 発行日 2025-01-10
出版者
出版者 Springer Nature
言語 en
ISSN
収録物識別子タイプ PISSN
収録物識別子 0957-4522
ISSN
収録物識別子タイプ EISSN
収録物識別子 1573-482X
item_10001_relation_14
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識別子タイプ DOI
関連識別子 https://doi.org/10.1007/s10854-024-14142-7
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