| アイテムタイプ |
学術雑誌論文 / Journal Article(1) |
| 公開日 |
2025-04-08 |
| タイトル |
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タイトル |
Development of thermally stable FTO thin films on quartz substrates for carrier collection in semiconductor photoelectrodes |
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言語 |
en |
| 言語 |
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言語 |
eng |
| 資源タイプ |
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資源タイプ |
journal article |
| アクセス権 |
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アクセス権 |
open access |
| 著者 |
東, 智弘
WEKO
35376
e-Rad_Researcher
80762088
| ja |
東, 智弘
宮崎大学
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| ja-Kana |
ヒガシ, トモヒロ
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| en |
Higashi, Tomohiro
University of Miyazaki
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Search repository
Fukagawa, Shintaro
Wakishima, Kaisei
Yoshiyama, Koichi
Narita, Yuki
吉野, 賢二
WEKO
12061
e-Rad_Researcher
80284826
| ja |
吉野, 賢二
宮崎大学
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| ja-Kana |
ヨシノ, ケンジ
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| en |
Yoshino, Kenji
University of Miyazaki
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Search repository
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| 抄録 |
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内容記述タイプ |
Abstract |
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内容記述 |
The development of transparent conductive oxide (TCO) materials is crucial for establishing effective photogenerated carrier transportation in solar-to-chemical energy conversion processes. In this study, we utilized the spray pyrolysis technique to develop F-doped tin oxide (FTO) thin films on double-sided polished quartz substrates, to produce TCO with superior thermal durability. This has enabled the production of semiconductor-based photoelectrodes. We successfully fabricated FTO films with thicknesses of 650–750 nm on quartz substrates. Hall effect measurements revealed that the FTO prepared on quartz (FTO/quartz) had resistivity, carrier concentration, and Hall mobility comparable to those of commercial FTO-coated soda lime glass (FTO/glass). The light transmittance in the visible and near-infrared regions satisfied the TCO criteria. The thermal stability was assessed by post-annealing the samples in air at specific temperatures. Up to 700 °C in air, the variations in resistivity and transmittance were minimal. However, post-annealing above 800 °C eventually caused a substantial increase in resistivity. Microscopic and spectroscopic analyses indicated enhanced SnO2 crystallinity owing to F-dopant elimination and film cracking. This yielded an increased resistivity. Furthermore, we fabricated a p-type CuBi2O4 semiconductor conjugated with FTO/quartz and evaluated the photoelectrochemical (PEC) properties. Unlike the use of conventional FTO/glass substrates, CuBi2O4/FTO/quartz maintained PEC functionality under simulated AM 1.5G solar illumination with H2O2 as a sacrificial reagent. This study has provided the potential for the development of semiconductor materials, including surface modification techniques requiring high-temperature treatments. Furthermore, it would contribute to material design strategies for efficient solar-to-chemical energy conversion systems. |
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言語 |
en |
| 内容記述 |
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内容記述タイプ |
Other |
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内容記述 |
Citation: Tomohiro Higashi, Shintaro Fukagawa, Kaisei Wakishima, Koichi Yoshiyama, Yuki Narita, Kenji Yoshino, Development of thermally stable FTO thin films on quartz substrates for carrier collection in semiconductor photoelectrodes, Journal of Materials Chemistry C, 12(40), 16443-16458, 2024, https://doi.org/10.1039/d4tc02823f |
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言語 |
en |
| bibliographic_information |
en : Journal of Materials Chemistry C
巻 12,
号 40,
p. 16443-16458,
発行日 2024-09-09
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| 出版者 |
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出版者 |
Royal Society of Chemistry (RSC) |
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言語 |
en |
| ISSN |
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収録物識別子タイプ |
PISSN |
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収録物識別子 |
2050-7526 |
| ISSN |
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収録物識別子タイプ |
EISSN |
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収録物識別子 |
2050-7534 |
| item_10001_relation_14 |
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関連タイプ |
isVersionOf |
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識別子タイプ |
DOI |
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関連識別子 |
https://doi.org/10.1039/d4tc02823f |
| 出版タイプ |
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出版タイプ |
AM |
Revised manuscript (1.4 MB)
