{"created":"2024-10-24T05:18:39.999301+00:00","id":2000814,"links":{},"metadata":{"_buckets":{"deposit":"9295566a-f287-4c03-8872-22342a06fc2f"},"_deposit":{"created_by":9,"id":"2000814","owners":[9],"pid":{"revision_id":0,"type":"depid","value":"2000814"},"status":"published"},"_oai":{"id":"oai:miyazaki-u.repo.nii.ac.jp:02000814","sets":["73","73:36","73:36:330","73:36:330:1729743357219"]},"author_link":["7290","7289"],"control_number":"2000814","item_10002_biblio_info_7":{"attribute_name":"bibliographic_information","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2024-10-23","bibliographicIssueDateType":"Issued"},"bibliographicPageEnd":"50","bibliographicPageStart":"45","bibliographicVolumeNumber":"53","bibliographic_titles":[{"bibliographic_title":"宮崎大学工学部紀要","bibliographic_titleLang":"ja"},{"bibliographic_title":"Memoirs of Faculty of Engineering, University of Miyazaki","bibliographic_titleLang":"en"}]}]},"item_10002_description_5":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"Cu2ZnSnS4 (CZTS) has an ideal energy gap (𝐸𝐸g) for solar cells of 1.5 eV and a high optical absorption coefficient, and its constituent elements are non-toxic and abundant on Earth. Therefore, it is attracting attention as a nextgeneration thin-film solar cell material to replace CuInGaSe2 (CIGS). However, the conversion efficiency of CZTS solar cell is smaller than that of CIGS solar cell. This is due to the lower open circuit voltage (VOC) caused by the numerous crystal defects and lattice disorder in CZTS. Therefore, in this paper, we investigated the crystal defects in CZTS that causes the VOC decrease using Piezoelectric Photothermal Spectroscopy (PPT) and Photoluminescence (PL) methods. PPT and PL measurements at room temperature showed that the energy of the PL peak was 190 meV lower than 𝐸𝐸g estimated from the PPT spectrum. This energy difference was corresponding to the sum of the energy levels of two anti-site defects of ZnCu and CuZn. Therefore, we attributed this luminescence to the donor-acceptor pair radiation of ZnCu and CuZn. The PPT and PL spectra indicated unique temperature characteristics, which were attributed to the potential fluctuations in the band structure of CZTS. We investigated the defects responsible for the potential fluctuation from the temperature dependence of 𝐸𝐸g and PL peak.","subitem_description_language":"en","subitem_description_type":"Abstract"}]},"item_10002_identifier_registration":{"attribute_name":"identifier_registration","attribute_value_mlt":[{"subitem_identifier_reg_text":"10.34481/0002000814","subitem_identifier_reg_type":"JaLC"}]},"item_10002_publisher_8":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"宮崎大学工学部","subitem_publisher_language":"ja"},{"subitem_publisher":"Faculty of Engineering, University of Miyazaki","subitem_publisher_language":"en"}]},"item_10002_source_id_11":{"attribute_name":"item_10002_source_id_11","attribute_value_mlt":[{"subitem_source_identifier":"AA00732558","subitem_source_identifier_type":"NCID"}]},"item_10002_source_id_9":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"05404924","subitem_source_identifier_type":"PISSN"}]},"item_10002_version_type_20":{"attribute_name":"出版タイプ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_970fb48d4fbd8a85","subitem_version_type":"VoR"}]},"item_access_right":{"attribute_name":"アクセス権","attribute_value_mlt":[{"subitem_access_right":"open access","subitem_access_right_uri":"http://purl.org/coar/access_right/c_abf2"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"大山, 博暉","creatorNameLang":"ja"},{"creatorName":"オオヤマ, ヒロキ","creatorNameLang":"ja-Kana"},{"creatorName":"Ohyama, Hiroki","creatorNameLang":"en"}]},{"creatorNames":[{"creatorName":"遠藤, 聡馬","creatorNameLang":"ja"},{"creatorName":"エンドウ, ソウマ","creatorNameLang":"ja-Kana"},{"creatorName":"Endo, Soma","creatorNameLang":"en"}]},{"creatorAffiliations":[{"affiliationNameIdentifiers":[{"affiliationNameIdentifier":"0000000106573887","affiliationNameIdentifierScheme":"ISNI","affiliationNameIdentifierURI":"https://isni.org/isni/0000000106573887"}],"affiliationNames":[{"affiliationName":"宮崎大学","affiliationNameLang":"ja"},{"affiliationName":"University of Miyazaki","affiliationNameLang":"en"}]}],"creatorNames":[{"creatorName":"碇, 哲雄","creatorNameLang":"ja"},{"creatorName":"イカリ, テツオ","creatorNameLang":"ja-Kana"},{"creatorName":"Ikari, Tetsuo","creatorNameLang":"en"}],"familyNames":[{"familyName":"碇","familyNameLang":"ja"},{"familyName":"イカリ","familyNameLang":"ja-Kana"},{"familyName":"Ikari","familyNameLang":"en"}],"givenNames":[{"givenName":"哲雄","givenNameLang":"ja"},{"givenName":"テツオ","givenNameLang":"ja-Kana"},{"givenName":"Tetsuo","givenNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"7290","nameIdentifierScheme":"WEKO"},{"nameIdentifier":"70113214","nameIdentifierScheme":"e-Rad_Researcher","nameIdentifierURI":"https://kaken.nii.ac.jp/ja/search/?qm=70113214"}]},{"creatorAffiliations":[{"affiliationNameIdentifiers":[{"affiliationNameIdentifier":"0000000106573887","affiliationNameIdentifierScheme":"ISNI","affiliationNameIdentifierURI":"https://isni.org/isni/0000000106573887"}],"affiliationNames":[{"affiliationName":"宮崎大学","affiliationNameLang":"ja"},{"affiliationName":"University of Miyazaki","affiliationNameLang":"en"}]}],"creatorNames":[{"creatorName":"福山, 敦彦","creatorNameLang":"ja"},{"creatorName":"フクヤマ, アツヒコ","creatorNameLang":"ja-Kana"},{"creatorName":"Fukuyama, Atsuhiko","creatorNameLang":"en"}],"familyNames":[{"familyName":"福山","familyNameLang":"ja"},{"familyName":"フクヤマ","familyNameLang":"ja-Kana"},{"familyName":"Fukuyama","familyNameLang":"en"}],"givenNames":[{"givenName":"敦彦","givenNameLang":"ja"},{"givenName":"アツヒコ","givenNameLang":"ja-Kana"},{"givenName":"Atsuhiko","givenNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"7289","nameIdentifierScheme":"WEKO"},{"nameIdentifier":"10264368","nameIdentifierScheme":"e-Rad_Researcher","nameIdentifierURI":"https://kaken.nii.ac.jp/ja/search/?qm=10264368"}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_access","date":[{"dateType":"Available","dateValue":"2024-10-24"}],"filename":"53-045.pdf","filesize":[{"value":"1.1 MB"}],"format":"application/pdf","licensetype":"license_note","mimetype":"application/pdf","url":{"url":"https://miyazaki-u.repo.nii.ac.jp/record/2000814/files/53-045.pdf"},"version_id":"d06276b1-0ea3-4f2f-9c98-13a68df9a5cf"}]},"item_keyword":{"attribute_name":"キーワード","attribute_value_mlt":[{"subitem_subject":"CZTS","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"Thin film solar cells","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"Defects","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"Potential fluctuation","subitem_subject_language":"en","subitem_subject_scheme":"Other"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"jpn"}]},"item_resource_type":{"attribute_name":"item_resource_type","attribute_value_mlt":[{"resourcetype":"departmental bulletin paper","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"PPT 及びPL 法によるCZTS 太陽電池の欠陥準位およびポテンシャル揺らぎ評価","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"PPT 及びPL 法によるCZTS 太陽電池の欠陥準位およびポテンシャル揺らぎ評価","subitem_title_language":"ja"},{"subitem_title":"Evaluation of Defect level and Potential Fluctuation in CZTS Solar Cells by PPT and PL Methods","subitem_title_language":"en"}]},"item_type_id":"10002","owner":"9","path":["73","36","330","1729743357219"],"pubdate":{"attribute_name":"PubDate","attribute_value":"2024-10-23"},"publish_date":"2024-10-23","publish_status":"0","recid":"2000814","relation_version_is_last":true,"title":["PPT 及びPL 法によるCZTS 太陽電池の欠陥準位およびポテンシャル揺らぎ評価"],"weko_creator_id":"9","weko_shared_id":-1},"updated":"2025-01-07T01:52:21.330668+00:00"}