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CuSbS2 結晶中のCu/Sb 比がキャリア濃度へ及ぼす影響 Effect of Cu/Sb ratio on carrier concentration of CuSbS2 crystal 竹内, 麻奈人 30441 タケウチ, マナト 富永, 姫香 28221 トミナガ, ヒメカ Tominaga, Himeka 永岡, 章 13284 ナガオカ, アキラ 70784271 Nagaoka, Akira 池田, 茂 30444 イケダ, シゲル 吉野, 賢二 12061 ヨシノ, ケンジ 80284826 Yoshino, Kenji Takeuchi, Manato 30446 富永, 姫香 28221 トミナガ, ヒメカ Tominaga, Himeka Ikeda, Shigeru 30449 Compound semiconductor, CuSbS2, Bulk Crystal CuSbS2 bulk crystals were fabricated in vertical furanace from 600 to 1000 ºC. CuSbS2 single phase could be evaluated above 900 ºC by means of X-Ray diffraction and raman spectroscopy, respectively. The carrier concentration of CuSbS2 single phase decreased with increasing growth tempertature. It was asuumed that the lattice defect of Sb atoms in Cu site is decreased in CuSbS2 bulk crystal. departmental bulletin paper 宮崎大学工学部 Faculty of Engineering, University of Miyazaki 2018-07 VoR application/pdf 宮崎大学工学部紀要 47 99 102 Memoirs of Faculty of Engineering, University of Miyazaki AA00732558 05404924 https://miyazaki-u.repo.nii.ac.jp/record/5660/files/p99-102_vol47.pdf http://hdl.handle.net/10458/6417 https://miyazaki-u.repo.nii.ac.jp/records/5660 jpn