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        <identifier>oai:miyazaki-u.repo.nii.ac.jp:00002454</identifier>
        <datestamp>2023-11-29T00:46:54Z</datestamp>
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          <dc:title>ジキ チュウセイセン ホウデン プラズマ オ モチイタ カーボン ナノチューブ ノ サクセイ</dc:title>
          <dc:title>磁気中性線放電プラズマを用いたカーボンナノチューブの作製</dc:title>
          <dc:title>Production of Carbon Nanotubes by Neutral Loop Discharge Plasma</dc:title>
          <dc:creator>川尻, 晋平</dc:creator>
          <dc:creator>15997</dc:creator>
          <dc:creator>カワシリ, シンペイ</dc:creator>
          <dc:creator>Kawashiri, Shinpei</dc:creator>
          <dc:creator>楊, 鍾煥</dc:creator>
          <dc:creator>12398</dc:creator>
          <dc:creator>井上, 大士</dc:creator>
          <dc:creator>12399</dc:creator>
          <dc:creator>イノウエ, ダイシ</dc:creator>
          <dc:creator>Sung, Youl-Moon</dc:creator>
          <dc:creator>6715</dc:creator>
          <dc:creator>Sung, Youl Moon</dc:creator>
          <dc:creator>成, 烈汶</dc:creator>
          <dc:creator>ソン, ヤルブン</dc:creator>
          <dc:creator>大坪, 昌久</dc:creator>
          <dc:creator>6637</dc:creator>
          <dc:creator>オオツボ, マサヒサ</dc:creator>
          <dc:creator>Otsubo, Masahisa</dc:creator>
          <dc:creator>本田, 親久</dc:creator>
          <dc:creator>6647</dc:creator>
          <dc:creator>ホンダ, チカヒサ</dc:creator>
          <dc:creator>Honda, Chikahisa</dc:creator>
          <dc:creator>川尻, 晋平</dc:creator>
          <dc:creator>15997</dc:creator>
          <dc:creator>カワシリ, シンペイ</dc:creator>
          <dc:creator>Kawashiri, Shinpei</dc:creator>
          <dc:creator>Yang, Jong Hwan</dc:creator>
          <dc:creator>12404</dc:creator>
          <dc:creator>Inoue, Daishi</dc:creator>
          <dc:creator>12405</dc:creator>
          <dc:creator>Sung, Youl-Moon</dc:creator>
          <dc:creator>6715</dc:creator>
          <dc:creator>Sung, Youl Moon</dc:creator>
          <dc:creator>成, 烈汶</dc:creator>
          <dc:creator>ソン, ヤルブン</dc:creator>
          <dc:subject>Neural Loop Discharge(NLD), Carbon Nanotubes(CNT)</dc:subject>
          <dc:description>Recently, the big diameter making of the wafer is rapidly advanced with the ultrafine processing
technology of 0.1μm in the minimum in recent semiconductor manufacturing process line width in the
process of the semiconductor. Then, the plasma source by which a uniform process in a large area can
be done is requested. Then, the NLD (Neutral Loop Discharge) plasma was proposed. Because the
NLD plasma can dynamically control impossible plasma in past plasma, a highly effective process
can be done. However, it is a current state of being limited from the structure only to the etching field
now, We have aimed to pioneer the NLD plasma to a new field by applying a peculiar concept of the
NLD plasma to the CNT (Carbon Nanotubes) making.</dc:description>
          <dc:description>departmental bulletin paper</dc:description>
          <dc:publisher>宮崎大学工学部</dc:publisher>
          <dc:publisher>Faculty of Engineering, University of Miyazaki</dc:publisher>
          <dc:date>2006-08-30</dc:date>
          <dc:type>VoR</dc:type>
          <dc:format>application/pdf</dc:format>
          <dc:identifier>宮崎大学工学部紀要</dc:identifier>
          <dc:identifier>35</dc:identifier>
          <dc:identifier>101</dc:identifier>
          <dc:identifier>106</dc:identifier>
          <dc:identifier>Memoirs of Faculty of Engineering, University of Miyazaki</dc:identifier>
          <dc:identifier>AA00732558</dc:identifier>
          <dc:identifier>05404924</dc:identifier>
          <dc:identifier>https://miyazaki-u.repo.nii.ac.jp/record/2454/files/KJ00004439496.pdf</dc:identifier>
          <dc:identifier>http://hdl.handle.net/10458/421</dc:identifier>
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