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Investigation of nonradiative transition processes in p- and n-type silicon single crystals by piezoelectric photothermal spectroscopy 福山, 敦彦 7289 フクヤマ, アツヒコ 10264368 Fukuyama, Atsuhiko 碇, 哲雄 7290 イカリ, テツオ 70113214 Ikari, Tetsuo Memon, Aftab A 7380 Sato, Syoichiro 7382 The piezoelectric photothermal spectroscopy （PPTS） technique was used to study the nonradiative excitation/deexcitation process in p- and n-type single crystal silicon. The effectiveness of PPTS to investigate surface states and bulk properties of single crystal silicon has been demonstrated. PPTS measurements were conducted on p- and n-type, 〈100〉 orientation, single crystal silicon samples. A broad peaked signal around 1.18±0.01 eV at room temperature showed the characteristics of slow surface states present on a silicon surface. One more signal bearing a peak around 1.07±0.005 eV was due to bulk effect. The PPTS measurements conducted at various temperatures revealed band-to-band and valence band-to-excitons states' transition with phonon assistance. The measurements at 4.2 and 110 K resolved four types of phonon participation. A good agreement between theoretical expressions and experimental data substantiates our findings that our proposed technique is useful to investigate phonon contribution in the absorption edge for rather thin semiconductor samples. American Institute of Physics 2003-01 VoR journal article application/pdf Review of Scientific Instruments 1 74 592 594 https://miyazaki-u.repo.nii.ac.jp/record/1158/files/592ikari.pdf http://hdl.handle.net/10458/4239 https://miyazaki-u.repo.nii.ac.jp/records/1158 eng ©2003 American Institute of Physics