2026-03-14T14:32:12Z https://miyazaki-u.repo.nii.ac.jp/oai

oai:miyazaki-u.repo.nii.ac.jp:00005660 2025-01-14T00:43:33Z 73 73:36 73:36:330 73:36:330:328

CuSbS2 結晶中のCu/Sb 比がキャリア濃度へ及ぼす影響 Effect of Cu/Sb ratio on carrier concentration of CuSbS2 crystal 竹内, 麻奈人 タケウチ, マナト 富永, 姫香 トミナガ, ヒメカ Tominaga, Himeka 富永 トミナガ Tominaga 姫香 ヒメカ Himeka 70784271 永岡, 章 ナガオカ, アキラ Nagaoka, Akira 永岡 ナガオカ Nagaoka 章 アキラ Akira 宮崎大学 University of Miyazaki 池田, 茂 イケダ, シゲル 80284826 吉野, 賢二 ヨシノ, ケンジ Yoshino, Kenji 吉野 ヨシノ Yoshino 賢二 ケンジ Kenji 宮崎大学 University of Miyazaki Takeuchi, Manato 富永, 姫香 トミナガ, ヒメカ Tominaga, Himeka 富永 トミナガ Tominaga 姫香 ヒメカ Himeka Ikeda, Shigeru Compound semiconductor, CuSbS2, Bulk Crystal CuSbS2 bulk crystals were fabricated in vertical furanace from 600 to 1000 ºC. CuSbS2 single phase could be evaluated above 900 ºC by means of X-Ray diffraction and raman spectroscopy, respectively. The carrier concentration of CuSbS2 single phase decreased with increasing growth tempertature. It was asuumed that the lattice defect of Sb atoms in Cu site is decreased in CuSbS2 bulk crystal. 宮崎大学工学部 Faculty of Engineering, University of Miyazaki 2018-07 jpn departmental bulletin paper VoR http://hdl.handle.net/10458/6417 https://miyazaki-u.repo.nii.ac.jp/records/5660 AA00732558 05404924 宮崎大学工学部紀要 Memoirs of Faculty of Engineering, University of Miyazaki 47 99 102 https://miyazaki-u.repo.nii.ac.jp/record/5660/files/p99-102_vol47.pdf application/pdf 1.0 MB 2020-06-21