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3C-SiC膜上に成長したSiCウィスカーの光学的評価と単一光子源への有用性
http://hdl.handle.net/10458/00010268
http://hdl.handle.net/10458/000102684cd74c93-8a7b-4826-9a51-51570a4329da
| 名前 / ファイル | ライセンス | アクション |
|---|---|---|
本文 (1.9 MB)
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| Item type | 紀要論文 / Departmental Bulletin Paper(1) | |||||
|---|---|---|---|---|---|---|
| 公開日 | 2021-10-18 | |||||
| タイトル | ||||||
| タイトル | 3C-SiC膜上に成長したSiCウィスカーの光学的評価と単一光子源への有用性 | |||||
| 言語 | ja | |||||
| タイトル | ||||||
| タイトル | Optical Characterization of SiC Whiskers Grown on 3C-SiC Films and their Usefulness for Single Photon Sources | |||||
| 言語 | en | |||||
| 言語 | ||||||
| 言語 | jpn | |||||
| キーワード | ||||||
| 言語 | en | |||||
| 主題Scheme | Other | |||||
| 主題 | 3C-SiC | |||||
| キーワード | ||||||
| 言語 | en | |||||
| 主題Scheme | Other | |||||
| 主題 | SiC-Whisker | |||||
| キーワード | ||||||
| 言語 | en | |||||
| 主題Scheme | Other | |||||
| 主題 | Single photon source | |||||
| キーワード | ||||||
| 言語 | en | |||||
| 主題Scheme | Other | |||||
| 主題 | Monomethylsilane | |||||
| キーワード | ||||||
| 言語 | en | |||||
| 主題Scheme | Other | |||||
| 主題 | Photoluminescence | |||||
| 資源タイプ | ||||||
| 資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||
| 資源タイプ | departmental bulletin paper | |||||
| 著者 |
川畑, 公佑
× 川畑, 公佑× 中村, 泰樹× 迫田, 理久× 成田, 克× 碇, 哲雄× 福山, 敦彦× Kawabata, Kosuke× Nakamura, Taiju× Sakoda, Riku× Narita, Yuzuru |
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| 抄録 | ||||||
| 内容記述タイプ | Abstract | |||||
| 内容記述 | Single Photon Source (SPS) has been adopted as a quantum information and communication technology for quantum cryptography and quantum computing. Although defects in SiC films are currently studied in SPS, there is difficulty in fabricating such defects under controlled conditions. SiC whiskers (SiC-Wk) have the potential to overcome this difficulty. In this study, we investigated the photoluminescence (PL) of SiC-Wk and discussed whether it could be used as SPS or not. The SiC-Wk were grown on the 3C-SiC films deposited on epitaxially grown 3C-SiC/Si substrates using monomethylsilane gas at 750 °C. When the temperature increased to 800 °C, only 3C-SiC films were deposited. The latter samples with no whiskers were used as a reference. In the observed PL spectra measured at low temperatures, broad luminescence attributed to the lattice defect levels of the 3C-SiC film was observed regardless of the whisker formation. By subtracting the luminescence contribution of 3C-SiC film, small emission peaks at 628 and 654 nm were observed for the whisker samples. Comparing to the reported PL spectra from the defect in SiC in the literature, we found that observed two luminescence peaks from the whiskers are available as SPS. Since defects are usually difficult to control, the usefulness of the whiskers is demonstrated. | |||||
| 言語 | en | |||||
| 書誌情報 |
ja : 宮崎大学工学部紀要 en : Memoirs of Faculty of Engineering, University of Miyazaki 巻 50, p. 65-68, 発行日 2021-09-28 |
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| 出版者 | ||||||
| 出版者 | 宮崎大学工学部 | |||||
| 言語 | ja | |||||
| 出版者 | ||||||
| 出版者 | Faculty of Engineering, University of Miyazaki | |||||
| 言語 | en | |||||
| ISSN | ||||||
| 収録物識別子タイプ | ISSN | |||||
| 収録物識別子 | 05404924 | |||||
| 書誌レコードID | ||||||
| 収録物識別子タイプ | NCID | |||||
| 収録物識別子 | AA00732558 | |||||
| 著者版フラグ | ||||||
| 出版タイプ | VoR | |||||
| 出版タイプResource | http://purl.org/coar/version/c_970fb48d4fbd8a85 | |||||
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川畑, 公佑, 中村, 泰樹, 迫田, 理久, 成田, 克, 碇, 哲雄, 福山, 敦彦, Kawabata, Kosuke, Nakamura, Taiju, Sakoda, Riku, Narita, Yuzuru, 2021, 3C-SiC膜上に成長したSiCウィスカーの光学的評価と単一光子源への有用性: 宮崎大学工学部, 65–68 p.
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