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MOVPE 法で作製したGaAsSb 層厚の異なるInAs/GaAsSb超格子のラマン測定による各層の評価について
http://hdl.handle.net/10458/6703
http://hdl.handle.net/10458/6703b1527881-9689-472a-8db2-1378eb4dbf85
名前 / ファイル | ライセンス | アクション |
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本文 (1.2 MB)
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Item type | 紀要論文 / Departmental Bulletin Paper(1) | |||||
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公開日 | 2020-06-21 | |||||
タイトル | ||||||
言語 | ja | |||||
タイトル | MOVPE 法で作製したGaAsSb 層厚の異なるInAs/GaAsSb超格子のラマン測定による各層の評価について | |||||
タイトル | ||||||
言語 | en | |||||
タイトル | InAs / GaSb superlattice grown with different thickness GaSb layer by MOVPE method by Raman measurement | |||||
言語 | ||||||
言語 | eng | |||||
キーワード | ||||||
言語 | en | |||||
主題Scheme | Other | |||||
主題 | MOVPE, InAs/GaAsSb, Raman, Superlattice | |||||
資源タイプ | ||||||
資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||
資源タイプ | departmental bulletin paper | |||||
その他(別言語等)のタイトル | ||||||
その他のタイトル | MOVPEホウ デ サクセイ シタGaAsSbソウアツ ノ コトナルInAs/GaAsSbチョウコウシ ノ ラマン ソクテイ ニ ヨル カクソウ ノ ヒョウカ ニ ツイテ | |||||
言語 | ja-Kana | |||||
著者 |
大石, 優貴
× 大石, 優貴× 浅生, 大輝× 荒井, 昌和× 前田, 幸治× Oishi, Yuki× 浅生, 大輝 |
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抄録 | ||||||
内容記述タイプ | Abstract | |||||
内容記述 | The composition of each layer in InAs/GaSb superlattices with different thickness GaSb layer grown by MOVPE were investigated by raman scattering method. It was found that when the GaSb layer was thin, the As ratio in GaAsSb was high, and when the GaSb layer was thick, almost no As was incorporated. Regarding the GaSb layer, the result of mixed crystal ratio from raman measurement almost agreed with the result from X-ray diffraction method. | |||||
言語 | en | |||||
書誌情報 |
ja : 宮崎大学工学部紀要 en : Memoirs of Faculty of Engineering, University of Miyazaki 巻 48, p. 55-58, 発行日 2019-07 |
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出版者 | ||||||
言語 | ja | |||||
出版者 | 宮崎大学工学部 | |||||
出版者 | ||||||
言語 | en | |||||
出版者 | Faculty of Engineering, University of Miyazaki | |||||
ISSN | ||||||
収録物識別子タイプ | ISSN | |||||
収録物識別子 | 05404924 | |||||
書誌レコードID | ||||||
収録物識別子タイプ | NCID | |||||
収録物識別子 | AA00732558 | |||||
著者版フラグ | ||||||
出版タイプ | VoR | |||||
出版タイプResource | http://purl.org/coar/version/c_970fb48d4fbd8a85 |