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Optical and electrical properties of layer semiconductor p-GaSe doped with Zn
http://hdl.handle.net/10458/5312
http://hdl.handle.net/10458/5312bf7825dc-b99e-4126-bc87-7ebc6de5af3e
Item type | 学術雑誌論文 / Journal Article(1) | |||||
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公開日 | 2020-06-21 | |||||
タイトル | ||||||
言語 | en | |||||
タイトル | Optical and electrical properties of layer semiconductor p-GaSe doped with Zn | |||||
言語 | ||||||
言語 | eng | |||||
キーワード | ||||||
言語 | en | |||||
主題Scheme | Other | |||||
キーワード | Zinc, Doping, Crystal stoichiometry, Crystalline semiconductors, Electrical properties | |||||
資源タイプ | ||||||
資源タイプ | journal article | |||||
アクセス権 | ||||||
著者 |
重冨, 茂
× 重冨, 茂× 碇, 哲雄× 中島, 寛× 中島, 寛 |
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書誌情報 |
Journal of Applied Physics 巻 74, 号 6, p. 4125-4129, 発行日 1993-09-15 |
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出版者 | ||||||
出版者 | American Institute of Physics | |||||
ISSN | ||||||
収録物識別子タイプ | ISSN | |||||
収録物識別子 | 00218979 |