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Electron and hole trap levels in semi-insulating GaAs investigated by a temperature variation of piezoelectric photo-thermal spectra
http://hdl.handle.net/10458/5168
http://hdl.handle.net/10458/5168f1aa56ba-f498-4d25-b660-9da07bdbcda3
Item type | 学術雑誌論文 / Journal Article(1) | |||||
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公開日 | 2020-06-21 | |||||
タイトル | ||||||
言語 | en | |||||
タイトル | Electron and hole trap levels in semi-insulating GaAs investigated by a temperature variation of piezoelectric photo-thermal spectra | |||||
言語 | ||||||
言語 | eng | |||||
キーワード | ||||||
言語 | en | |||||
主題Scheme | Other | |||||
キーワード | Piezoelectric photo-thermal (PPT) measurement, Temperature variation of PPT signal intensity, Semi-insulating GaAs, Deep level, Rate equation, EL2 | |||||
資源タイプ | ||||||
資源タイプ | journal article | |||||
アクセス権 | ||||||
著者 |
伊藤, 敦史
× 伊藤, 敦史× 佐藤, 庄一郎× 多田, 晋× 田中, 秀司× 福山, 敦彦× 碇, 哲雄× Ito, Atsushi× Sato, Shoichiro× 多田, 晋× Tanaka, Shuji |
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書誌情報 |
Materials Science and Engineering: B 巻 102, 号 1-3, p. 22–24-22–24, 発行日 2003-09 |
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出版者 | ||||||
出版者 | Elsevier | |||||
ISSN | ||||||
収録物識別子タイプ | ISSN | |||||
収録物識別子 | 09215107 |