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Piezoelectric Photothermal and Surface Photo-Voltage Studies of Carrier Recombination Mechanism at Interface of Si p–n Junction
http://hdl.handle.net/10458/5106
http://hdl.handle.net/10458/5106a22ec174-d2cd-42bd-8510-27602737c6c1
Item type | 学術雑誌論文 / Journal Article(1) | |||||
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公開日 | 2020-06-21 | |||||
タイトル | ||||||
言語 | en | |||||
タイトル | Piezoelectric Photothermal and Surface Photo-Voltage Studies of Carrier Recombination Mechanism at Interface of Si p–n Junction | |||||
言語 | ||||||
言語 | eng | |||||
資源タイプ | ||||||
資源タイプ | journal article | |||||
アクセス権 | ||||||
著者 |
内堀, 裕樹
× 内堀, 裕樹× 中馬, 博樹× 王, 萍× 福山, 敦彦× 碇, 哲雄× Uchibori, Yuki× Chuman, Hiroki× Hayashi, Hiromitsu× Sonoda, Shusei× Wang, Ping |
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書誌情報 |
Japanese Journal of Applied Physics 巻 46, 号 7B, p. 4636-4641, 発行日 2007-07 |
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出版者 | ||||||
出版者 | The Japan Society of Applied Physics | |||||
出版者 | ||||||
出版者 | 応用物理学会 | |||||
ISSN | ||||||
収録物識別子タイプ | ISSN | |||||
収録物識別子 | 00214922 |