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分子線エピタキシ一法によるGaAs(001)上へのCaSrF2絶縁膜成長と評価
http://hdl.handle.net/10458/2394
http://hdl.handle.net/10458/239430c30070-ad9a-49e3-b8fa-297643693f24
名前 / ファイル | ライセンス | アクション |
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KJ00005629999.pdf (3.2 MB)
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Item type | 紀要論文 / Departmental Bulletin Paper(1) | |||||
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公開日 | 2009-10-30 | |||||
タイトル | ||||||
言語 | ja | |||||
タイトル | 分子線エピタキシ一法によるGaAs(001)上へのCaSrF2絶縁膜成長と評価 | |||||
タイトル | ||||||
言語 | en | |||||
タイトル | MBE Growth and Characterization of CaSrF2 Insulator on GaAs(001) | |||||
言語 | ||||||
言語 | jpn | |||||
キーワード | ||||||
言語 | en | |||||
主題Scheme | Other | |||||
主題 | GaAs, CaSrF2, MIS, MBE | |||||
資源タイプ | ||||||
資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||
資源タイプ | departmental bulletin paper | |||||
その他(別言語等)のタイトル | ||||||
その他のタイトル | ブンシセン エピタキシーホウ ニヨル GaAs(001) ジョウ エノ CaSrF2 ゼツエンマク セイチョウ ト ヒョウカ | |||||
著者 |
上村, 彦樹
× 上村, 彦樹× 尾関, 雅志× 前田, 幸治× Uemura, Hiroki |
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書誌情報 |
ja : 宮崎大学工学部紀要 en : Memoirs of Faculty of Engineering, University of Miyazaki 巻 38, p. 151-158, 発行日 2009-09-30 |
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出版者 | ||||||
言語 | ja | |||||
出版者 | 宮崎大学工学部 | |||||
出版者 | ||||||
言語 | en | |||||
出版者 | Faculty of Engineering, University of Miyazaki | |||||
ISSN | ||||||
収録物識別子タイプ | ISSN | |||||
収録物識別子 | 05404924 | |||||
書誌レコードID | ||||||
収録物識別子タイプ | NCID | |||||
収録物識別子 | AA00732558 | |||||
著者版フラグ | ||||||
出版タイプ | VoR | |||||
出版タイプResource | http://purl.org/coar/version/c_970fb48d4fbd8a85 |