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"http://hdl.handle.net/10458/4697", "pubdate": {"attribute_name": "PubDate", "attribute_value": "2013-12-24"}, "publish_date": "2013-12-24", "publish_status": "0", "recid": "2888", "relation": {}, "relation_version_is_last": true, "title": ["原料供給シーケンスの違いが原子層エピタキシー法によるGaAsN薄膜成長に与える影響"], "weko_shared_id": 2}
原料供給シーケンスの違いが原子層エピタキシー法によるGaAsN薄膜成長に与える影響
http://hdl.handle.net/10458/4697
http://hdl.handle.net/10458/46975b2a6c86-e85a-4d2d-afb5-77c1b0379e20
名前 / ファイル | ライセンス | アクション |
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engineering27-30.pdf (781.7 kB)
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Item type | 紀要論文 / Departmental Bulletin Paper(1) | |||||
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公開日 | 2013-12-24 | |||||
タイトル | ||||||
言語 | ja | |||||
タイトル | 原料供給シーケンスの違いが原子層エピタキシー法によるGaAsN薄膜成長に与える影響 | |||||
タイトル | ||||||
言語 | en | |||||
タイトル | Effects of Gas Flow Sequence on GaAsN Films Grown by Atomic Layer Epitaxy | |||||
言語 | ||||||
言語 | jpn | |||||
キーワード | ||||||
言語 | en | |||||
主題Scheme | Other | |||||
主題 | Atomic Layer epitaxy, gas flow sequence, Gallium arsenide nitride, Residual Impurities, selflimiting mechanism | |||||
資源タイプ | ||||||
資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||
資源タイプ | departmental bulletin paper | |||||
その他(別言語等)のタイトル | ||||||
その他のタイトル | ゲンリョウ キョウキュウ シーケンス ノ チガイ ガ ゲンシソウ エピタキシーホウ ニヨル GaAsN ハクマク セイチョウ ニ アタエル エイキョウ | |||||
著者 |
芳賀, 章博
× 芳賀, 章博× 貞任, 萌× 原口, 智宏× 鈴木, 秀俊× 福山, 敦彦× 尾関, 雅志× 碇, 哲雄× 芳賀, 章博× 貞任, 萌× 原口, 智宏 |
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抄録 | ||||||
内容記述タイプ | Abstract | |||||
内容記述 | GaAs(N) films have been grown on semi-insulating GaAs(001) substrate at substrate temperatures of 480, 500 and 520 °C by atomic layer epitaxy (ALE). We investigated the effects of gas flow sequences on self-limiting mechanism (SLM), N incorporation, and residual impurities as a first step to grow GaAsN on precisely controlled surface by ALE. N precursor molecules were supplied to Ga (On-Ga) and As terminated surfaces (On-As). The On-As case showed rough surface and their crystal qualities were not good. In On-Ga case, SLM functioned well in whole growth temperature region and On-Ga sample showed low density of residual impurities. These demonstrated that On-Ga sequence is effective to grow GaAsN thin films on precisely controlled surface by ALE technique. | |||||
言語 | en | |||||
書誌情報 |
ja : 宮崎大学工学部紀要 en : Memoirs of Faculty of Engineering, University of Miyazaki 巻 42, p. 27-30, 発行日 2013-08-30 |
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出版者 | ||||||
言語 | ja | |||||
出版者 | 宮崎大学工学部 | |||||
出版者 | ||||||
言語 | en | |||||
出版者 | Faculty of Engineering, University of Miyazaki | |||||
ISSN | ||||||
収録物識別子タイプ | ISSN | |||||
収録物識別子 | 05404924 | |||||
書誌レコードID | ||||||
収録物識別子タイプ | NCID | |||||
収録物識別子 | AA00732558 | |||||
著者版フラグ | ||||||
出版タイプ | VoR | |||||
出版タイプResource | http://purl.org/coar/version/c_970fb48d4fbd8a85 |