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カルコパイライト型半導体AgGaSe2結晶の禁制帯幅の温度依存性
http://hdl.handle.net/10458/3197
http://hdl.handle.net/10458/3197a4f4284a-d306-4ba3-8844-bc116c57aef7
名前 / ファイル | ライセンス | アクション |
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engineering39-14.pdf (912.8 kB)
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Item type | 紀要論文 / Departmental Bulletin Paper(1) | |||||
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公開日 | 2011-02-25 | |||||
タイトル | ||||||
言語 | ja | |||||
タイトル | カルコパイライト型半導体AgGaSe2結晶の禁制帯幅の温度依存性 | |||||
タイトル | ||||||
言語 | en | |||||
タイトル | Temperature Dependence of Bandgap Energy of AgGaSe2 Crystals | |||||
言語 | ||||||
言語 | jpn | |||||
キーワード | ||||||
言語 | en | |||||
主題Scheme | Other | |||||
主題 | AgGaSe2, Liner thermal expansion, Hot-Press, Chalcopyrite | |||||
資源タイプ | ||||||
資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||
資源タイプ | departmental bulletin paper | |||||
その他(別言語等)のタイトル | ||||||
その他のタイトル | カルコパイライトガタ ハンドウタイ AgGaSe2 ケッショウ ノ キンセイタイハバ ノ オンド イゾンセイ | |||||
著者 |
永岡, 章
× 永岡, 章× 吉野, 賢二× 碇, 哲雄 |
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抄録 | ||||||
内容記述タイプ | Abstract | |||||
内容記述 | AgGaSe2 crystals were grown by Hot-Press method at 400~700℃ under 25 MPa for 1 hour. We measured temperature dependent X-ray diffraction (XRD) and photoluminescence (PL) of AgGaSe2 crystal provided at 700℃. Using each lattice constants calculated by XRD, it was found that a liner thermal expansion decreased for T<70 K. Due to band gap energy Eg increased for T<70 K, the Eg coefficient dEg/dT showed positive behavior. In the PL spectra, free exciton peaks showed to increase for T<70 K as well as the liner thermal expansion. | |||||
言語 | en | |||||
書誌情報 |
ja : 宮崎大学工学部紀要 en : Memoirs of Faculty of Engineering, University of Miyazaki 巻 39, p. 83-89, 発行日 2010-09-30 |
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出版者 | ||||||
言語 | ja | |||||
出版者 | 宮崎大学工学部 | |||||
出版者 | ||||||
言語 | en | |||||
出版者 | Faculty of Engineering, University of Miyazaki | |||||
ISSN | ||||||
収録物識別子タイプ | ISSN | |||||
収録物識別子 | 05404924 | |||||
書誌レコードID | ||||||
収録物識別子タイプ | NCID | |||||
収録物識別子 | AA00732558 | |||||
著者版フラグ | ||||||
出版タイプ | VoR | |||||
出版タイプResource | http://purl.org/coar/version/c_970fb48d4fbd8a85 |