The crystalline Sr(Al2Si2O8) films on quartz glass substrate were grown by a RF magnetron sputtering method. Al2O3 and SrAl2O4 powder were used for the targets. The crystalized Al2O3 buffer layer needs to crystalize the thin film on quartz glass substrate. The deposited thin film was annealed at 1150℃ in H2/Ar gas for the improvement the crystallinity. The annealed film were identified a mixed phases of both crystalline SiO2 and Sr(Al2Si2O8). The existence of Eu2+ and Eu3+ ions in the films were confirmed by photoluminescence emission of broad peak at 380 nm and that of weak peaks at about 600 nm respectively. These results indicated that the embedded Al2O3 buffer layers and the annealing treatments were important in the emission of Eu2+ ions in Sr(Al2Si2O8) film.
雑誌名
宮崎大學工學部紀要
巻
45
ページ
91 - 94
発行年
2016-07-31
出版者
宮崎大学工学部
Miyazaki University
Faculty of Engineering, University of Miyazaki
リポジトリのご案内
RF マグネトロンスパッタリング法を用いた薄膜蛍光体の作製とその発光特性の評価
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