Catalyst-free GaAs-nanowire (GaAs-NWs) have been studied . But, It doesn't achieve to growth GaAs-NWs on Si(001) substrate looking toward the opto-electronic integrated circuit (OEIC) and Micro Electro Mechanical systems (MEMS). So we attempted to make site selective growth of GaAs-NWs by using patterned Si substrate and investigated the flux condition of maximum GaAs-NWs density. We found that it is possible to selective growth of GaAs-NWs by patterned Si substrate and GaAs-NWs or GaAs layer morphology depend on Ga flux. For detail, Ga flux and As flux are less than 0.25 [ML/s] and 1.0 [ML/s] for maximum GaAs-NWs density. Additionally, we concluded relation between Ga flux and Ga droplet have an effect on relation between Ga flux and GaAs-NWs density.
雑誌名
宮崎大學工學部紀要
巻
44
ページ
5 - 8
発行年
2015-07-31
出版者
宮崎大学工学部
Miyazaki University
Faculty of Engineering, University of Miyazaki
リポジトリのご案内
場所選択加工したSi 基板を用いたGaAs-NWs の成長
本文
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