GaAs(N) films have been grown on semi-insulating GaAs(001) substrate at substrate temperatures of 480, 500 and 520 °C by atomic layer epitaxy (ALE). We investigated the effects of gas flow sequences on self-limiting mechanism (SLM), N incorporation, and residual impurities as a first step to grow GaAsN on precisely controlled surface by ALE. N precursor molecules were supplied to Ga (On-Ga) and As terminated surfaces (On-As). The On-As case showed rough surface and their crystal qualities were not good. In On-Ga case, SLM functioned well in whole growth temperature region and On-Ga sample showed low density of residual impurities. These demonstrated that On-Ga sequence is effective to grow GaAsN thin films on precisely controlled surface by ALE technique.
雑誌名
宮崎大學工學部紀要
巻
42
ページ
27 - 30
発行年
2013-08-30
出版者
宮崎大学工学部
Miyazaki University
Faculty of Engineering, University of Miyazaki
リポジトリのご案内
原料供給シーケンスの違いが原子層エピタキシー法によるGaAsN薄膜成長に与える影響
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