The crystal structure of Ca_1-xSr_xF_2 films (x =0.3~0.7) grown on GaAs(001) by molecular beam epitaxy was studied. The composition of Ca_1-xSr_xF_2 film was changed by SrF_2 cells temperature. The film thickness were 100 to 300 nm. The lattice constants of <001> and <110> direction of the films were determined by rocking curve measurement, the (004) and (224) reciprocal lattice maps by the high resolution X-ray diffractometry. The lattice constants of both directions increased as the SrF_2 composition increasing. The lattice constant of the films which was expected for the 0.1% lattice mismatched could be measured.
雑誌名
宮崎大學工學部紀要
巻
41
ページ
155 - 159
発行年
2012-07-30
出版者
宮崎大学工学部
Faculty of Engineering, University of Miyazaki
リポジトリのご案内
高分解能X線回折法によるGaAs基板上のフッ化物薄膜結晶の評価
engineering41_155-159.pdf
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